SI7214DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI7214DN-T1-GE3 is a type of Field Effect Transistor (FET), and specifically, a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). A FET is a type of transistor that works as a voltage-controlled switch and is used in many electronic and electrical circuits to control the flow of electricity. The SI7214DN-T1-GE3 is an L-type MOSFET array made of two separate metal oxide semiconductor transistors and an isolation element that blocks the conduction path between them.

A metal oxide semiconductor is an insulated-gate field effect transistor featuring a metal oxide gate (MOS) between the semiconductor body and the source. The metal oxide gate creates a barrier that can be used to control the voltage created across the semiconductor body, thus controlling the conduction current of the channel. MOSFETs are designed to be switched off with very low operating voltages and are used to build "switch" circuits, allowing for efficient control of large amounts of power.

The SI7214DN-T1-GE3 MOSFET array is unique because it offers two separately addressable MOSFETs within a single package. This means that each transistor can be controlled independently of the other, allowing for more complex switching operations. This makes the SI7214DN-T1-GE3 ideal for applications requiring two separate switches, as it provides an efficient and compact solution for such cases.

The SI7214DN-T1-GE3 is suitable for a wide variety of applications, such as consumer electronics, instrumentation, communications and industrial automation. In consumer electronics, the device can be used to control the flow of current in LCD displays, audio amplifiers and other consumer-level gadgets. In the instrumentation and communications industries, the device can be used to activate LCD displays and control power supplies. And in industrial automation, the device can be used to control relays and other electronic elements.

The SI7214DN-T1-GE3 is further distinguished by its low on-resistance and low input capacitance, allowing for efficient operation at high frequencies. The device features a maximum junction temperature of 150°C, and its maximum drain-source breakdown voltage is rated at 32V. The device is also capable of operating up to 2A. In addition, the device is capable of operating up to a maximum voltage of 6V on the gate.

In conclusion, the SI7214DN-T1-GE3 is a powerful and versatile MOSFET array device with the capability to independently control two MOSFETs within a single package. The device is suitable for a wide range of applications, such as consumer electronics, instrumentation, communications and industrial automation. It is highly reliable, has low signal leakage, low input capacitance and a maximum junction temperature of 150°C. It is also capable of operating up to 6V on the gate and up to a maximum current of 2A. All these features combined make the SI7214DN-T1-GE3 an ideal solution for a variety of electrical and electronic projects.

The specific data is subject to PDF, and the above content is for reference