SIA811DJ-T1-E3 Allicdata Electronics
Allicdata Part #:

SIA811DJ-T1-E3TR-ND

Manufacturer Part#:

SIA811DJ-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 4.5A SC70-6
More Detail: P-Channel 20V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surfa...
DataSheet: SIA811DJ-T1-E3 datasheetSIA811DJ-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
Series: LITTLE FOOT®
Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIA811DJ-T1-E3 is a single JFET (junction field effect transistor). This type of component is designed to control electrical signals in electronic circuits and also act as a switch in high current and high voltage applications. The SIA811DJ-T1-E3 works by creating a voltage potential region and hence an electric field, which can block current flow, effectively creating a “dry contact” switch.

How it Works

The SIA811DJ-T1-E3, like all JFETs, has very simple operating characteristics. It consists of a gate, which is the control terminal. This gate has a predetermined threshold voltage, called the pinch-off voltage, which is the voltage at which no current is allowed to flow through the device. This gate is connected to the drain and the source terminals, which act as the two outputs. When a voltage supplied to the gate is lower than the pinch-off voltage, the device is in an open state, allowing current to flow between the two outputs. When the voltage supplied to the gate is higher than the pinch-off voltage, the device is in a closed state, cutting off current flow between the two outputs.

The main advantage of field-effect transistors over other types of transistors is their low power dissipation. This makes them ideal for applications in which power savings are of great importance, such as in battery powered devices. Field-effect transistors are also superior for switching high power and high voltage circuits, as the power dissipation of the device is low and the amount of current that can be switched is high.

Applications of the SIA811DJ-T1-E3

The SIA811DJ-T1-E3 is suitable for use in a wide range of applications. It can be used as a switching element in high power and high voltage circuits, such as in motor control circuits and HVAC systems. It is also useful as an analog switch in audio applications, as well as in industrial applications such as equipment control systems. The low power dissipation of the device makes it particularly suitable for battery-powered applications, such as portable electronics.

The SIA811DJ-T1-E3 is a versatile JFET with a wide range of applications. It is ideal for power and voltage circuits, as well as in audio and industrial applications. Its low power dissipation makes it ideal for battery-powered applications. With its simple design and reliable operation, it is a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SIA8" Included word is 9
Part Number Manufacturer Price Quantity Description
SIA810DJ-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 20V 4.5A SC-7...
SIA814DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 4.5A SC70...
SIA811DJ-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 4.5A SC70...
SIA811ADJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 4.5A PPAK...
SIA817EDJ-T1-GE3 Vishay Silic... 0.14 $ 9000 MOSFET P-CH 30V 4.5A SC-7...
SIA850DJ-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 190V 0.95A SC...
SIA811DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 4.5A SC70...
SIA813DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 4.5A SC70...
SIA810DJ-T1-GE3 Vishay Silic... 0.34 $ 1000 MOSFET N-CH 20V 4.5A SC70...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics