| Allicdata Part #: | SIA811DJ-T1-E3TR-ND |
| Manufacturer Part#: |
SIA811DJ-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 20V 4.5A SC70-6 |
| More Detail: | P-Channel 20V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surfa... |
| DataSheet: | SIA811DJ-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | PowerPAK® SC-70-6 Dual |
| Supplier Device Package: | PowerPAK® SC-70-6 Dual |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.9W (Ta), 6.5W (Tc) |
| FET Feature: | Schottky Diode (Isolated) |
| Input Capacitance (Ciss) (Max) @ Vds: | 355pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 8V |
| Series: | LITTLE FOOT® |
| Rds On (Max) @ Id, Vgs: | 94 mOhm @ 2.8A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SIA811DJ-T1-E3 is a single JFET (junction field effect transistor). This type of component is designed to control electrical signals in electronic circuits and also act as a switch in high current and high voltage applications. The SIA811DJ-T1-E3 works by creating a voltage potential region and hence an electric field, which can block current flow, effectively creating a “dry contact” switch.
How it Works
The SIA811DJ-T1-E3, like all JFETs, has very simple operating characteristics. It consists of a gate, which is the control terminal. This gate has a predetermined threshold voltage, called the pinch-off voltage, which is the voltage at which no current is allowed to flow through the device. This gate is connected to the drain and the source terminals, which act as the two outputs. When a voltage supplied to the gate is lower than the pinch-off voltage, the device is in an open state, allowing current to flow between the two outputs. When the voltage supplied to the gate is higher than the pinch-off voltage, the device is in a closed state, cutting off current flow between the two outputs.
The main advantage of field-effect transistors over other types of transistors is their low power dissipation. This makes them ideal for applications in which power savings are of great importance, such as in battery powered devices. Field-effect transistors are also superior for switching high power and high voltage circuits, as the power dissipation of the device is low and the amount of current that can be switched is high.
Applications of the SIA811DJ-T1-E3
The SIA811DJ-T1-E3 is suitable for use in a wide range of applications. It can be used as a switching element in high power and high voltage circuits, such as in motor control circuits and HVAC systems. It is also useful as an analog switch in audio applications, as well as in industrial applications such as equipment control systems. The low power dissipation of the device makes it particularly suitable for battery-powered applications, such as portable electronics.
The SIA811DJ-T1-E3 is a versatile JFET with a wide range of applications. It is ideal for power and voltage circuits, as well as in audio and industrial applications. Its low power dissipation makes it ideal for battery-powered applications. With its simple design and reliable operation, it is a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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SIA811DJ-T1-E3 Datasheet/PDF