
Allicdata Part #: | SIA811DJ-T1-GE3-ND |
Manufacturer Part#: |
SIA811DJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 4.5A SC70-6 |
More Detail: | P-Channel 20V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 Dual |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta), 6.5W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 355pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 8V |
Series: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 94 mOhm @ 2.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SIA811DJ-T1-GE3 is a high-speed switching MOSFET with high-voltage, low-on resistance, fast switching speed and low gate charge. It can be used in a variety of applications, such as high-speed switching, motor control, power conversion, and power supply design. This article will discuss the application fields and working principle of the SIA811DJ-T1-GE3.
Application Fields
The SIA811DJ-T1-GE3 can be used in high-speed switching and motor control applications, such as DC-DC converters, half-bridge converters, and full-bridge converters. It has a fast switching speed of 45V/ns, which makes it ideal for high-speed switching applications. Furthermore, its low-on resistance of 0.16Ω can provide higher switching efficiency and reduce power loss in power devices. Additionally, the SIA811DJ-T1-GE3 can be used in power supply design due to its high-voltage capability. With a drain-source voltage rating of 600V, it is suitable for applications that require high-voltage or high-current capability.
Working Principle
The SIA811DJ-T1-GE3 is a depletion-mode MOSFET with a single polarity gate-source voltage rating. As such, when the gate-source voltage is negative, the MOSFET is in its “off” state. In this state, the MOSFET’s drain-source is completely blocked, and it does not conduct current. When the gate-source voltage is made positive, the MOSFET is in its “on” state. In this state, the MOSFET’s drain-source voltage drops, and the electrical current begins to flow. The SIA811DJ-T1-GE3 also features a low gate charge, which reduces switching losses and improves efficiency.
Conclusion
The SIA811DJ-T1-GE3 is a versatile high-speed switching MOSFET with high-voltage, low-on resistance, fast switching speed, and low gate charge. Its wide range of application fields, including high-speed switching, motor control, and power supply design, make it an ideal choice for various applications. Furthermore, its depletion-mode design, featuring a single polarity gate-source voltage rating, makes it simple to operate and efficient in operation.
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