SIA811DJ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIA811DJ-T1-GE3-ND

Manufacturer Part#:

SIA811DJ-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 4.5A SC70-6
More Detail: P-Channel 20V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surfa...
DataSheet: SIA811DJ-T1-GE3 datasheetSIA811DJ-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
Series: LITTLE FOOT®
Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SIA811DJ-T1-GE3 is a high-speed switching MOSFET with high-voltage, low-on resistance, fast switching speed and low gate charge. It can be used in a variety of applications, such as high-speed switching, motor control, power conversion, and power supply design. This article will discuss the application fields and working principle of the SIA811DJ-T1-GE3.

Application Fields

The SIA811DJ-T1-GE3 can be used in high-speed switching and motor control applications, such as DC-DC converters, half-bridge converters, and full-bridge converters. It has a fast switching speed of 45V/ns, which makes it ideal for high-speed switching applications. Furthermore, its low-on resistance of 0.16Ω can provide higher switching efficiency and reduce power loss in power devices. Additionally, the SIA811DJ-T1-GE3 can be used in power supply design due to its high-voltage capability. With a drain-source voltage rating of 600V, it is suitable for applications that require high-voltage or high-current capability.

Working Principle

The SIA811DJ-T1-GE3 is a depletion-mode MOSFET with a single polarity gate-source voltage rating. As such, when the gate-source voltage is negative, the MOSFET is in its “off” state. In this state, the MOSFET’s drain-source is completely blocked, and it does not conduct current. When the gate-source voltage is made positive, the MOSFET is in its “on” state. In this state, the MOSFET’s drain-source voltage drops, and the electrical current begins to flow. The SIA811DJ-T1-GE3 also features a low gate charge, which reduces switching losses and improves efficiency.

Conclusion

The SIA811DJ-T1-GE3 is a versatile high-speed switching MOSFET with high-voltage, low-on resistance, fast switching speed, and low gate charge. Its wide range of application fields, including high-speed switching, motor control, and power supply design, make it an ideal choice for various applications. Furthermore, its depletion-mode design, featuring a single polarity gate-source voltage rating, makes it simple to operate and efficient in operation.

The specific data is subject to PDF, and the above content is for reference

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