SIA814DJ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIA814DJ-T1-GE3TR-ND

Manufacturer Part#:

SIA814DJ-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 4.5A SC70-6
More Detail: N-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surfa...
DataSheet: SIA814DJ-T1-GE3 datasheetSIA814DJ-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: LITTLE FOOT®
Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SIA814DJ-T1-GE3 is a single type of Field Effect Transistor (FET) transistor that has an extremely wide range of applications. Designed by Toshiba, this FET is a widely used device that has become an industry standard. In this article, we will discuss the applications of the SIA814DJ-T1-GE3, as well as its working principle.

The SIA814DJ-T1-GE3 is a general purpose, low power, and low noise FET, making it ideal for many applications, including amplification, switching and voltage regulator circuits. It has an exceptional linearity performance and very high input impedance, enabling it to be used in precision-demanding applications, and its very low gate capacitance makes it suitable for use in high-speed switching circuits. This FET also has a very low on-state resistance and gate charge, which results in lower power consumption and heat dissipation.

In addition to its excellent performance in digital and analog applications, the SIA814DJ-T1-GE3 is also highly reliable. With its high breakdown voltage and high peak current capability, it is suitable for use in high-power applications, and its robust structure ensures that it can withstand high-temperature environments and is resistant to aging.

In terms of its working principle, the SIA814DJ-T1-GE3 is a voltage-controlled device, meaning that it is capable of regulating the voltage that passes through it, depending on the voltage applied to its gate terminal. This voltages causes the transistor to vary the resistance between its source and drain terminals, allowing for the regulation of current. This makes the FET highly efficient and reliable in both digital and analog applications, as it is capable of controlling and regulating the current at a very low voltage.

Overall, the SIA814DJ-T1-GE3 is a reliable and versatile FET, capable of handling a wide range of applications. From low-power and high-precision analog circuits to high-power and high-temperature applications, the SIA814DJ-T1-GE3 is a reliable device that can meet the demands of nearly any circuit. Furthermore, its efficient working principle and highly robust structure makes it a reliable and long-lasting component.

The specific data is subject to PDF, and the above content is for reference

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