
Allicdata Part #: | SIA814DJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA814DJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 4.5A SC70-6 |
More Detail: | N-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 Dual |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta), 6.5W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 61 mOhm @ 3.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SIA814DJ-T1-GE3 is a single type of Field Effect Transistor (FET) transistor that has an extremely wide range of applications. Designed by Toshiba, this FET is a widely used device that has become an industry standard. In this article, we will discuss the applications of the SIA814DJ-T1-GE3, as well as its working principle.
The SIA814DJ-T1-GE3 is a general purpose, low power, and low noise FET, making it ideal for many applications, including amplification, switching and voltage regulator circuits. It has an exceptional linearity performance and very high input impedance, enabling it to be used in precision-demanding applications, and its very low gate capacitance makes it suitable for use in high-speed switching circuits. This FET also has a very low on-state resistance and gate charge, which results in lower power consumption and heat dissipation.
In addition to its excellent performance in digital and analog applications, the SIA814DJ-T1-GE3 is also highly reliable. With its high breakdown voltage and high peak current capability, it is suitable for use in high-power applications, and its robust structure ensures that it can withstand high-temperature environments and is resistant to aging.
In terms of its working principle, the SIA814DJ-T1-GE3 is a voltage-controlled device, meaning that it is capable of regulating the voltage that passes through it, depending on the voltage applied to its gate terminal. This voltages causes the transistor to vary the resistance between its source and drain terminals, allowing for the regulation of current. This makes the FET highly efficient and reliable in both digital and analog applications, as it is capable of controlling and regulating the current at a very low voltage.
Overall, the SIA814DJ-T1-GE3 is a reliable and versatile FET, capable of handling a wide range of applications. From low-power and high-precision analog circuits to high-power and high-temperature applications, the SIA814DJ-T1-GE3 is a reliable device that can meet the demands of nearly any circuit. Furthermore, its efficient working principle and highly robust structure makes it a reliable and long-lasting component.
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