Allicdata Part #: | SIA817EDJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA817EDJ-T1-GE3 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 4.5A SC-70-6 |
More Detail: | P-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surfa... |
DataSheet: | SIA817EDJ-T1-GE3 Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.12675 |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 Dual |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta), 6.5W (Tc) |
FET Feature: | Schottky Diode (Body) |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIA817EDJ-T1-GE3 is a high-performance low-voltage N-channel MOSFET that has become increasingly popular in the field of power electronics due to its wide range of applications and its easy-to-use working principles. The device is capable of operating at an output voltage as low as 4V, making it ideal for use in low voltage systems where smaller power levels are needed. In addition, the SIA817EDJ-T1-GE3’s internal resistance is relatively low at 4Ω, which further increases its efficiency when compared to other FETs of similar nature.
The key to understanding the working principle of the SIA817EDJ-T1-GE3 is to understand the device’s construction. The MOSFET is composed of two parts: the body and the channel. The body includes the drain, source, and gate electrodes that are connected together in order to form the three-terminal device. The channel is composed of a semiconductor material whose conductivity can be controlled by means of voltage applied to the gate electrode. By adjusting the amount of voltage applied to the gate, the amount of current that is able to flow through the MOSFET can be regulated. Typically the gate voltage must be negative relative to the source voltage in order to achieve full on-state current.
The SIA817EDJ-T1-GE3’s wide range of applications can be attributed to its low voltage tolerance and exceptional efficiency. The device is highly suited for use in motor control applications due to its low-voltage operation and ability to withstand varying amounts of load current. As the device does not generate large amounts of heat when operating, it is also suitable for use in switching power supplies and DC-DC converters that require high efficiency. Additionally, the SIA817EDJ-T1-GE3’s high-performance characteristics make it an ideal choice for applications in telecommunications, industrial control, and automotive systems.
In summary, the SIA817EDJ-T1-GE3 is a high-performance and low-voltage N-channel MOSFET that is becoming increasingly popular in the power electronics industry due to its wide range of applications and easy-to-use working principles. The device’s high tolerance for low voltages and high efficiency make it an ideal choice for a variety of motor control, switching power supply, and DC-DC converter applications. The SIA817EDJ-T1-GE3 also makes an attractive choice for applications in telecommunications, industrial control, and automotive systems. In today’s competitive market, the SIA817EDJ-T1-GE3 is an attractive device that can help create solutions to many difficult power challenges.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIA811DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.5A SC70... |
SIA814DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 4.5A SC70... |
SIA850DJ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 190V 0.95A SC... |
SIA810DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 4.5A SC-7... |
SIA811DJ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.5A SC70... |
SIA811ADJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.5A PPAK... |
SIA813DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.5A SC70... |
SIA810DJ-T1-GE3 | Vishay Silic... | 0.34 $ | 1000 | MOSFET N-CH 20V 4.5A SC70... |
SIA817EDJ-T1-GE3 | Vishay Silic... | 0.14 $ | 9000 | MOSFET P-CH 30V 4.5A SC-7... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...