SIHF8N50D-E3

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220 Full Pack
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	33W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	527pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	850 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8.7A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHF8N50D-E3 is a power MOSFET device which is typically used in applications that require high power applications such as power amplifiers, inverters, and power switching. The SIHF8N50D-E3 is a single-N-channel enhancement-mode power MOSFET that can be operated at voltages as low as 6 Volt and drain-source current as high as 8 Amperes. This makes the device suitable for a wide variety of applications.The SIHF8N50D-E3 is an enhancement-mode power MOSFET that has an N-channel which is responsible for controlling the flow of current through the device. When a small voltage is applied to the gate (G) at threshold voltage (Vt) level, the device becomes "enhanced," allowing a current flow from the drain to the source. The amount of current can be easily adjusted by increasing or decreasing the voltage on the gate.The SIHF8N50D-E3 has a low gate charge and low ON-resistance which means it can handle high currents with low gate losses. This makes it ideal for high-power switching applications such as power amplifiers, inverters, and power switching. In addition, the SIHF8N50D-E3 also has a fast switching speed and is a stable, rugged device that is highly reliable.The SIHF8N50D-E3 has a maximum drain-source voltage of 500 Volts, a maximum drain current of 8 Amperes, and a maximum drain dissipated power of 80 Watts. This makes the device suitable for a wide variety of applications such as power amplifiers, inverters, and power switching.In addition to its high current handling capabilities, the SIHF8N50D-E3 has a low gate-to-source capacitance and low gate-threshold voltage which makes it ideal for switching applications that require a quick and precise change from an on to off state. Furthermore, the device is also able to withstand extreme heat and vibration as well as high frequency operation.The SIHF8N50D-E3 is a versatile device that has uses in many different types of applications. It is designed for use in medium- to high-power applications and can handle a wide range of voltages and currents. Furthermore, its low gate-to-source capacitance and low gate-threshold voltage means it can be used to quickly and precisely switch from an on to off state.In conclusion, the SIHF8N50D-E3 is a versatile power MOSFET device that is suitable for many types of applications such as power amplifiers, inverters, and power switching. It has a wide range of working voltages and currents, a low gate-to-source capacitance and low gate-threshold voltage, and a maximum drain-source voltage of 500 Volts, a maximum drain current of 8 Amperes, and a maximum drain dissipated power of 80 Watts. This makes the device highly reliable and an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description