SIHF12N60E-GE3

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The SIHF12N60E-GE3 is a high power MOSFET transistor, designed and manufactured by ON Semiconductor. It is part of ON Semiconductor’s EconoPACK™ family, and is suitable for a wide variety of applications, ranging from motor control to automotive gate drive, to high-current power supply and converters. This device features outstanding safe operating area (SOA), ultra low on-resistance and protective features including reverse drain-source diodes and overvoltage protection.

The SIHF12N60E-GE3 is a N-channel MOSFET transistor. It is a single device, meaning it consists of one transistor as opposed to multiple transistors in a package. It is available in a TO-263 Package, and is suitable for device applications at temperatures of up to 125°C. It has a breakdown voltage of 600V, an on-resistance of 9.2mΩ, and an output current rating of 12A (RDS(on)).

MOSFET transistors are widely used in a variety of applications due to their extremely low on-resistance, high switching frequency, and high operating voltage. The EconoPack™ SIHF12N60E-GE3 offers an outstanding strong SOA performance, and it is optimized for high current power supply and converter applications.

The working principle behind a MOSFET transistor is based on an insulated gate field effect. Unlike bipolar junction transistors, which rely on the control of current flow through the base, a MOSFET transistor uses an electric field to control current through the channel. This allows for significantly faster switching and higher current gains.

The SIHF12N60E-GE3 MOSFET transistor has several applications, including motor control and gate drives, high-current power supply and converters, and a wide range of automotive applications. It is also suitable for applications such as high-frequency switching, including Class D audio amplifiers and high performance switching applications.

In conclusion, the ON Semiconductor EconoPACK™ SIHF12N60E-GE3 MOSFET transistor is an innovative device that offers a wide range of features and applications for a range of electronic applications. Its high switching frequency and current gains make it an ideal choice for high-frequency and power supply systems, while its low on-resistance provides excellent SOA performance.

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