| Allicdata Part #: | SISA04DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SISA04DN-T1-GE3 |
| Price: | $ 0.41 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 40A 1212-8 |
| More Detail: | N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface... |
| DataSheet: |  SISA04DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.41000 |
| 10 +: | $ 0.39770 |
| 100 +: | $ 0.38950 |
| 1000 +: | $ 0.38130 |
| 10000 +: | $ 0.36900 |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3595pF @ 15V |
| Vgs (Max): | +20V, -16V |
| Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.15 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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A SISA04DN-T1-GE3 is an enhancement-mode power field-effect transistor (FET) built on a silicon dioxide layer that is normally metal-oxide-semiconductor (MOS). It is commonly used for applications such as high power switching and linear power amplifiers. The SISA04DN-T1-GE3 is a single N-channel enhancement mode MOSFET. It is built with a high-Current, low-cost, monolitic 60-V power, N-Channel MOSFET. The transistor features a very low on-resistance, fast switching frequency and wide bus voltage range.
The SISA04DN-T1-GE3 is made through a vertical N-MOS gate-reinforced (GNM) structure based on an ultra-thin gate oxide, which provides the device with a low on-resistance and fastest switching time. Moreover, an advanced layout design is applied to achieve a very low gate charge in order to minimize system power losses. The device also has improved switching efficiency due to its low gate-source capacitance. This makes the device ideal for high-frequency, high-current applications.
The working principle of the SISA04DN-T1-GE3 is simple. The device is operated by an external gate voltage that controls the device’s channel. When the gate voltage is increased, electron current flowing from the source to the drain increases and causes the MOSFET to conduct. When the gate voltage is reduced, electron current flowing from the source to the drain reduces and the MOSFET is cut off.
The SISA04DN-T1-GE3 features an excellent combination of performance, low on-resistance, smooth switching and low gate charge, making it suitable for high speed switchers and low voltage applications. Typical applications of the device include switching power supplies, motor control applications, SMPS, UPS, solar inverter and others.
In conclusion, the SISA04DN-T1-GE3 is a single N-channel enhancement mode MOSFET. It is characterized by its low on-resistance and wide bus voltage range, making it suitable for high speed switching and low voltage applications. The device utilizes its vertical N-MOS gate-reinforced structure based on an ultra-thin gate oxide to ensure fast switching time and low gate charge.
The specific data is subject to PDF, and the above content is for reference
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