SISA14DN-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SISA14DN-T1-GE3TR-ND |
Manufacturer Part#: |
SISA14DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 20A 1212-8 |
More Detail: | N-Channel 30V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Surf... |
DataSheet: | SISA14DN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.57W (Ta), 26.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 15V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5.1 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SISA14DN-T1-GE3 is a field-effect transistor (FET) used in specific appliances and components. It is a discrete component, meaning that it is used in devices alone and is not part of an integrated circuit (IC). This component is single ended, meaning it has a single electrical connection to its body. FETs are commonly used in analog circuits, as they can be used to switch and amplify signals. FETs offer high gain, low noise, and very low power consumption.
The SISA14DN-T1-GE3 is an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET). The metal-oxide-semiconductor is a component used to make transistors with the desired electrical characteristics for use in various applications. The ‘n-channel’ part of the title means that current flows through the device in one direction, whereas in a ‘p-channel’ MOSFET, current flows in the opposite direction. It has a maximum drain current rating of 14A, a drain-source voltage of 100V and a maximum gate-source voltage of 30V.
The SISA14DN-T1-GE3 is typically used as an amplifier or switch in an analog circuit. A switch is a device used to open or close a circuit. When an electrical signal is applied to the gate of a FET, it behaves like a switch by controlling the amount of current flowing between the source and the drain. When the signal is at a certain voltage, it is known as the ‘threshold voltage’, and the FET acts as an open switch. When the signal is higher than this voltage, the FET becomes a closed switch. The SISA14DN-T1-GE3 is used as an amplifier because it can amplify small signals. The FET amplifies the input voltage level by controlling the amount of current that passes through the device.
The SISA14DN-T1-GE3 is a useful component and is used in a wide range of applications due to its characteristics. It is used mostly in power electronic applications where extreme current or voltages are necessary. It is used in motor control applications such as power supplies and motor controllers, where circuit protection is necessary and the cost of a failure must be kept low. It is also used in other high power applications such as power converters, and in consumer electronics where miniaturization is important. Other applications include automotive systems, audio equipment, and telecommunications.
In conclusion, the SISA14DN-T1-GE3 is a single-ended n-channel MOSFET, designed for use in various applications. It offers high gain, low noise, and very low power consumption. It is used mostly in power electronic applications such as motor control and power supplies, converters, and consumer electronics. Its ability to switch and amplify signals, makes it is a very useful and versatile component.
The specific data is subject to PDF, and the above content is for reference
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