SISA14DN-T1-GE3 Allicdata Electronics

SISA14DN-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SISA14DN-T1-GE3TR-ND

Manufacturer Part#:

SISA14DN-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 20A 1212-8
More Detail: N-Channel 30V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Surf...
DataSheet: SISA14DN-T1-GE3 datasheetSISA14DN-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SISA14DN-T1-GE3 is a field-effect transistor (FET) used in specific appliances and components. It is a discrete component, meaning that it is used in devices alone and is not part of an integrated circuit (IC). This component is single ended, meaning it has a single electrical connection to its body. FETs are commonly used in analog circuits, as they can be used to switch and amplify signals. FETs offer high gain, low noise, and very low power consumption.

The SISA14DN-T1-GE3 is an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET). The metal-oxide-semiconductor is a component used to make transistors with the desired electrical characteristics for use in various applications. The ‘n-channel’ part of the title means that current flows through the device in one direction, whereas in a ‘p-channel’ MOSFET, current flows in the opposite direction. It has a maximum drain current rating of 14A, a drain-source voltage of 100V and a maximum gate-source voltage of 30V.

The SISA14DN-T1-GE3 is typically used as an amplifier or switch in an analog circuit. A switch is a device used to open or close a circuit. When an electrical signal is applied to the gate of a FET, it behaves like a switch by controlling the amount of current flowing between the source and the drain. When the signal is at a certain voltage, it is known as the ‘threshold voltage’, and the FET acts as an open switch. When the signal is higher than this voltage, the FET becomes a closed switch. The SISA14DN-T1-GE3 is used as an amplifier because it can amplify small signals. The FET amplifies the input voltage level by controlling the amount of current that passes through the device.

The SISA14DN-T1-GE3 is a useful component and is used in a wide range of applications due to its characteristics. It is used mostly in power electronic applications where extreme current or voltages are necessary. It is used in motor control applications such as power supplies and motor controllers, where circuit protection is necessary and the cost of a failure must be kept low. It is also used in other high power applications such as power converters, and in consumer electronics where miniaturization is important. Other applications include automotive systems, audio equipment, and telecommunications.

In conclusion, the SISA14DN-T1-GE3 is a single-ended n-channel MOSFET, designed for use in various applications. It offers high gain, low noise, and very low power consumption. It is used mostly in power electronic applications such as motor control and power supplies, converters, and consumer electronics. Its ability to switch and amplify signals, makes it is a very useful and versatile component.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SISA" Included word is 14
Part Number Manufacturer Price Quantity Description
SISA18DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 38.3A 121...
SISA12ADN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 25A 1212-...
SISA01DN-T1-GE3 Vishay Silic... 0.27 $ 1000 MOSFET P-CH 30V POWERPAK ...
SISA96DN-T1-GE3 Vishay Silic... 0.12 $ 3000 MOSFET N-CH 30V 16A POWER...
SISA34DN-T1-GE3 Vishay Silic... 0.14 $ 6000 MOSFET N-CH 30V 40A POWER...
SISA16DN-T1-GE3 Vishay Silic... 0.16 $ 3000 MOSFET N-CH 30V D-S PPAK ...
SISA10DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 30A 1212-...
SISA14DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 20A 1212-...
SISA26DN-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 25V 60A POWER...
SISA24DN-T1-GE3 Vishay Silic... 0.29 $ 15000 MOSFET N-CH 25V 60A POWER...
SISA66DN-T1-GE3 Vishay Silic... 0.29 $ 1000 MOSFET N-CH 30V 40A POWER...
SISA04DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 40A 1212-...
SISA72DN-T1-GE3 Vishay Silic... 0.14 $ 6000 MOSFET N-CH 40V 60A POWER...
SISA18ADN-T1-GE3 Vishay Silic... -- 24000 MOSFET N-CH 30V 38.3A 121...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics