| Allicdata Part #: | SISA18DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SISA18DN-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 38.3A 1212-8 |
| More Detail: | N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Sur... |
| DataSheet: |  SISA18DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.2W (Ta), 19.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 15V |
| Vgs (Max): | +20V, -16V |
| Gate Charge (Qg) (Max) @ Vgs: | 21.5nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38.3A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tape & Reel (TR) |
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The SISA18DN-T1-GE3 is a transistor type device that falls in the category of FETs and MOSFETs, specifically single types. It is used in a variety of applications including power management, switching, and amplification. This article will focus on the application field and working principle of the SISA18DN-T1-GE3.
The application field of the SISA18DN-T1-GE3 is quite extensive and includes a variety of electronic equipment. It is commonly found in power management systems, such as those used in automobiles and other motorized vehicles. It can also be used in switching and amplification applications, including high and low voltage switches, amplifiers, and filters. Additionally, it is often used in power and energy applications due to its performance capabilities and electrical properties.
The working principle behind the SISA18DN-T1-GE3 involves the use of an insulation-gate field-effect transistor (IGFET). These devices from the FET family are composed of two metal-oxide-semiconductor (MOS) regions, where one region is p-type and the other is n-type. The insulated gate region, which is composed of an oxide layer, separates these two regions, forming the IGFET. A gate voltage is applied to the IGFET in order to control current flow.
When the gate voltage is applied to the insulated gate region, it induces an electric field across the oxide layer. This electric field creates a capacitance, which in turn allows current to flow through the MOS regions. The current is then controlled by the gate voltage, thus allowing the device to be used in a variety of switching and amplification applications.
The SISA18DN-T1-GE3 is a versatile device that can be used in a variety of applications. It has a wide range of features, such as low on-state resistance and fast switching times, which make it an ideal choice for power management, switching, and amplification applications. It is also known for its robust construction and reliable performance, making it a great choice for high power and energy applications as well.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SISA18DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 38.3A 121... |
| SISA12ADN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 25A 1212-... |
| SISA01DN-T1-GE3 | Vishay Silic... | 0.27 $ | 1000 | MOSFET P-CH 30V POWERPAK ... |
| SISA96DN-T1-GE3 | Vishay Silic... | 0.12 $ | 3000 | MOSFET N-CH 30V 16A POWER... |
| SISA34DN-T1-GE3 | Vishay Silic... | 0.14 $ | 6000 | MOSFET N-CH 30V 40A POWER... |
| SISA16DN-T1-GE3 | Vishay Silic... | 0.16 $ | 3000 | MOSFET N-CH 30V D-S PPAK ... |
| SISA10DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 30A 1212-... |
| SISA14DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 20A 1212-... |
| SISA26DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 25V 60A POWER... |
| SISA24DN-T1-GE3 | Vishay Silic... | 0.29 $ | 15000 | MOSFET N-CH 25V 60A POWER... |
| SISA66DN-T1-GE3 | Vishay Silic... | 0.29 $ | 1000 | MOSFET N-CH 30V 40A POWER... |
| SISA04DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A 1212-... |
| SISA72DN-T1-GE3 | Vishay Silic... | 0.14 $ | 6000 | MOSFET N-CH 40V 60A POWER... |
| SISA18ADN-T1-GE3 | Vishay Silic... | -- | 24000 | MOSFET N-CH 30V 38.3A 121... |
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