SISA24DN-T1-GE3 Allicdata Electronics

SISA24DN-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SISA24DN-T1-GE3TR-ND

Manufacturer Part#:

SISA24DN-T1-GE3

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 25V 60A POWERPAK1212
More Detail: N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount Powe...
DataSheet: SISA24DN-T1-GE3 datasheetSISA24DN-T1-GE3 Datasheet/PDF
Quantity: 15000
1 +: $ 0.29000
10 +: $ 0.28130
100 +: $ 0.27550
1000 +: $ 0.26970
10000 +: $ 0.26100
Stock 15000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Series: TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SISA24DN-T1-GE3 is a vertical N-channel power metal-oxide-semiconductor field-effect transistor (MOSFET). It is a highly integrated MOSFET with a small size, low RDS(ON) and high saturation currents. It is a type of switch used in a variety of applications, from commercial to industrial.

In an N-channel MOSFET, voltage applied to the gate of the transistor controls the flow of electrons in the channel. If a positive voltage is applied to the gate, electrons in the channel are attracted to the gate and a current is created between the source and drain, allowing electrical power to flow. When there is no voltage at the gate, no current flows, and the MOSFET behaves like an open switch.

The SISA24DN-T1-GE3 is an ideal transistor for any application which requires a switch with a low power consumption and high efficiency. Its compact size, low RDS(ON), low gate charge and high saturation current make it an ideal choice for automotive, consumer and industrial applications.

In automotive applications, the SISA24DN-T1-GE3 can be used for power window switches, air conditioning, power steering, and other applications where high current needs to be switched. It can also be used for DC-DC buck converters, power supplies, and other power-related applications.

In consumer applications, the SISA24DN-T1-GE3 can be used for audio amplifiers, telephone systems, computer peripherals and other consumer products where a low power transistor is needed.

In industrial applications, the SISA24DN-T1-GE3 can be used for motor control, HVAC, electric drive systems, and other applications requiring precise control of high power loads. It can also be used for motor control, process control systems, automotive control systems, and a variety of other applications.

The SISA24DN-T1-GE3 is also ideal for switching applications that require a low switching frequency and low harmonic distortion. Its low on-state resistance, low gate charge and fast switching time make it an ideal candidate for switching applications.

Overall, the SISA24DN-T1-GE3 is an ideal transistor for a variety of applications requiring a switch with high efficiency, low power consumption and precise control. Its small size and low power consumption make it an ideal choice for automotive, consumer and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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