SISA96DN-T1-GE3 Discrete Semiconductor Products

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The SISA96DN-T1-GE3 is a depletion mode N-channel MOSFET with a breakdown voltage rating of -30V and a maximum gate source voltage rating of -20V. It is a small signal device with a maximum drain current rating of 5A and a maximum drain-source on-state resistance of 6 milliohms. It can be used in applications where low power dissipation and low noise levels are desired.

Application Fields

SISA96DN-T1-GE3 can be used in applications such as Audio, Automotive, Industrial, Consumer, Power Management, Portable & Portable TV, and Medical Electronics.

• Audio – The low power dissipation and low noise levels make the SISA96DN-T1-GE3 a good choice for audio applications.
• Automotive – This device can be used in car amplifiers, audio signal processing and other types of automotive systems where low power dissipation and low source noise levels are needed.
• Industrial – The SISA96DN-T1-GE3 can be used in industrial control systems, power supplies and other applications where low power dissipation and low source noise levels are needed.
• Consumer – The device can be used in consumer products such as radios, TVs, HiFi systems and other applications where low power dissipation and low source noise levels are desired.
• Power Management – The device can be useful in controlling the power supply of electronic systems, as well as controlling the power to motors, solenoids and other heavy-duty systems.
• Portable & Portable TV – The low power dissipation and low noise levels make the SISA96DN-T1-GE3 ideal for portable and portable TV applications.
• Medical Electronics – The device can be used in various medical electronics, such as pacemakers, hearing aids and other low-power, low-noise applications.

Working Principle

The SISA96DN-T1-GE3 MOSFET is a depletion mode device, meaning that when there is no gate voltage, the drain-source channel is on. In the on state, current flows from the drain to the source. When a negative gate voltage is applied, the channel will be pinched off, and the device will be off. In the off state, current cannot flow from the drain to the source.

The device operates in the depletion mode when the gate voltage is below the threshold voltage. If a positive gate voltage is applied, it will cause the device to go into the enhancement mode, where the channel will open up further when additional gate voltage is applied.

The SISA96DN-T1-GE3 has a breakdown voltage rating of -30V, meaning that the device can be operated with gate voltages up to -30V. It also has a maximum gate source voltage rating of -20V, meaning that the voltage between the gate and the source should not exceed -20V.

The SISA96DN-T1-GE3 has a maximum drain current rating of 5A and a maximum drain-source on-state resistance of 6 milliohms. This means that the device can handle up to 5A of drain current and will have a low resistance when it is turned on.

The SISA96DN-T1-GE3 can be used in applications where low power dissipation and low noise levels are desired. It is a reliable and cost-effective choice for various audio, automotive, industrial, consumer, power management, portable and medical electronics applications.

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