SMBT35200MT1G Allicdata Electronics
Allicdata Part #:

SMBT35200MT1G-ND

Manufacturer Part#:

SMBT35200MT1G

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 35V 2A 6TSOP
More Detail: Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW S...
DataSheet: SMBT35200MT1G datasheetSMBT35200MT1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.14714
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 35V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP
Description

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Introduction

The SMBT35200MT1G is a single, high-power, bipolar transistor device. It belongs to the Transistors - Bipolar (BJT) - Single category. This device is typically used as a driver of large currents and as a switch in switching power supplies. Due to its low on-resistance, high-impedance, on-off switch, the device is ideal for applications such as a high-power amplifier, power injector, and other switching power supplies.

Application Field

The SMBT35200MT1G can be used in a variety of applications. It is especially suitable for high-current applications that require frequent switching. For example, it can be used as an injector in switching power supplies, as a driver of high-power current, or as a switch in a motor controller. In addition, the device can be used in motor controllers, supplies for safety-critical systems, and for voltage regulation.

Moreover, the device can be used for the automated control of electronic devices. It can be applied to control the switching on and off of electronic devices, as well as for the modulation of voltage signals. It can also be used in control systems requiring high-impulse switching.

Working Principle

The SMBT35200MT1G device consists of a single, high-power bipolar junction transistor (BJT). It works on the principle of bipolar junction transistor action. A base-emitter junction acts as a semiconductor diode, and a base-collector junction acts as a current-carrying component. When current is applied to the base, it activates the current flow between the emitter and collector. The emitter and collector then carry the current, which is then amplified and can be used to control other devices.

In order to obtain high-power current, the device can be used with external biasing or operating voltage. The voltage applied to the base can have a maximum value of 12 V. The external biasing can be used to control the current between the collector and emitter. This can be used to control the switching on and off of the transistor.

The SMBT35200MT1G device can operate at frequencies up to 100 kHz. Thanks to its low on-resistance, it can provide excellent control of the switching times, allowing for accurate and precise control of electronic devices. The device also offers excellent thermal properties, with a maximum junction temperature of 200 °C.

Conclusion

The SMBT35200MT1G is a single, high-power, bipolar transistor device. It belongs to the Transistors - Bipolar (BJT) - Single category. This device is typically used as a driver of large currents and as a switch in switching power supplies. Due to its low on-resistance, high-impedance, on-off switch, the device is ideal for applications such as a high-power amplifier, power injector, and other switching power supplies.

The device can be used in a variety of applications, including motor controllers, supplies for safety-critical systems, and for voltage regulation. It works on the principle of bipolar junction transistor action, and can be used with external biasing or operating voltage to obtain high-power current. The device can operate at frequencies up to 100 kHz and offers excellent thermal properties.

The specific data is subject to PDF, and the above content is for reference

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