Allicdata Part #: | SMBT3904E6433HTMA1TR-ND |
Manufacturer Part#: |
SMBT3904E6433HTMA1 |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN 40V 0.2A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 330m... |
DataSheet: | SMBT3904E6433HTMA1 Datasheet/PDF |
Quantity: | 1000 |
50000 +: | $ 0.01376 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 330mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBT3904 |
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The SMBT3904E6433HTMA1 is a low-voltage NPN Silicon bipolar transistor also known as a Bipolar junction transistor (BJT). It operates in the single-device configuration, so it can be used with a single control signal like a PNP configuration. It can be used in a variety of applications from audio amplifiers and power amplifiers to high-frequency oscillators, switching circuits and chopper modulators.
The device is a small-signal, low-noise transistor with a single control element and a high-frequency capability of up to 150MHz. It has a typical breakdown voltage of 60V and is capable of withstanding extremely high power levels, making it ideal for a variety of commercial and industrial applications. The small size of the device means it is well suited to applications that require minimal space. It can easily be integrated into existing systems, and its low noise characteristics make it a excellent choice for audio and instrumentation systems.
The SMBT3904E6433HTMA1’s working principle is based on a NPN (Negative Positive Negative) silicon transistors. This particular configuration is chosen for its ability to produce good-quality amplification and low noise. Its active components are the base, collector and emitter. When an input voltage is applied to the base, it current flows from the collector to the emitter. This causes a voltage drop across the collector to emitter terminals, resulting in an amplified current flowing out from the emitter. Since the current in the collector is already amplified, it is much easier to control over other types of transistors.
The main application of the SMBT3904E6433HTMA1 is as an amplifier as it has a high voltage and power capability. It is widely used in audio amplification, switching and power output stages. It is designed to exhibit low temperature drift and high-frequency stability making it suitable for a variety of audio and instrumentation systems. Its high voltage and power capabilities also make it an excellent choice for power supply designs where high voltage and current demands are present.
The SMBT3904E6433HTMA1 is also ideal for switching applications due to its ability to switch rapidly at high speed and handle high currents. It is sometimes used in chopper modulators as they require low distortion and high-frequency stability to ensure accurate switching. Additionally, it can be used as an oscillator in high-frequency circuits, as it offers excellent performance. The device is available in a range of package types, including the TO99, TO220, DIP and SOT packages.
The SMBT3904E6433HTMA1 is a versatile, low-noise, high-voltage and high-power transistor used in a range of applications such as amplifiers, switching circuits and high-frequency oscillators. It offers excellent stability, low temperature drift and high-frequency performance for a range of audio and industrial applications. With its wide range of package types and size, it can easily be integrated into existing systems.
The specific data is subject to PDF, and the above content is for reference
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