SMBTA56E6327HTSA1 Allicdata Electronics

SMBTA56E6327HTSA1 Discrete Semiconductor Products

Allicdata Part #:

SMBTA56E6327HTSA1TR-ND

Manufacturer Part#:

SMBTA56E6327HTSA1

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP 80V 0.5A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 80V 500mA 100MHz 330m...
DataSheet: SMBTA56E6327HTSA1 datasheetSMBTA56E6327HTSA1 Datasheet/PDF
Quantity: 1000
36000 +: $ 0.02003
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 330mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MBTA56
Description

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The SMBTA56E6327HTSA1 is a type of bipolar junction transistor (BJT). It is a single device, which is an important part of the basic toolkit of electronics engineers and scientists. It is designed for a wide range of applications and offers an impressive range of performance, including good current gain, low noise, good voltage control, and high frequency response.

A BJT consists of three semiconductor layers, the emitter, the base, and the collector. The base layer is the bridge between the emitter and collector layers and can be activated or deactivated by injecting a current into or out of the base layer, which changes the amount of current flowing between the emitter and collector. This current control is the fundamental principle on which all transistors are based.

The SMBTA56E6327HTSA1 is particularly suited for amplifier, oscillator, switching, and signal generator circuits. It provides high current gains and good linearity, meaning that it can be used in applications such as audio amplifiers and signal conditioning. It also has good frequency response, so it can be used in radio and wireless devices. The base injection current is low, meaning that the device is power efficient, making it suitable for battery powered equipment.

The SMBTA56E6327HTSA1 includes various features that make it a versatile transistor. It has a dielectric isolation structure for improved signal integrity and reliability, a high-speed switching layer for enhanced switching performance, as well as a low power dissipation layer for improved power efficiency. This transistor is also protected from static discharge, which makes it ideal for use in sensitive electronic environments.

The SMBTA56E6327HTSA1 is a versatile and reliable transistor that can be used in a wide range of applications. Its ability to switch quickly and draw little power make it ideal for use in portable and battery-powered electronics. Its low power dissipation layer and dielectric isolation structure ensure high reliability and signal integrity. Its high current gain and good linearity make it suitable for use in audio amplifiers and signal conditioning circuits. Its high frequency response makes it suitable for use in radio and wireless devices. Its protection from static discharge makes it ideal for use in environments with sensitive electronics.

The specific data is subject to PDF, and the above content is for reference

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