Allicdata Part #: | SMBTA64INTR-ND |
Manufacturer Part#: |
SMBTA64E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP DARL 30V 0.5A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 30V 500m... |
DataSheet: | SMBTA64E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20000 @ 100mA, 5V |
Power - Max: | 330mW |
Frequency - Transition: | 125MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBTA64 |
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The SMBTA64E6327 is a single bipolar junction transistor (BJT) commonly used in a variety of applications. It is mainly used for switching and amplification of electrical signals. The SMBTA64E6327 is a NPN transistor and has three connections to the external circuit, which are emitter, collector and base.
Application Field
The SMBTA64E6327 is mainly used in amplifiers, switching circuits, linear circuits, etc. Its major applications are as follows.
- High speed switching – The SMBTA64E6327 can be used for high speed switching due to its low collector to emitter saturation voltage and high switching speed.
- Power amplifier – The SMBTA64E6327 can be used for power amplifiers due to its low voltage drop, high gain and low power consumption.
- RF amplifier – The SMBTA64E6327 can be used as an RF amplifier due to its inherent stability, wide frequency response and good linearity.
- Current amplifier – The SMBTA64E6327 can be used as a current amplifier due to its low input resistance and low output resistance.
- Voltage regulator – The SMBTA64E6327 can be used as a voltage regulator due to its low voltage drop and low output resistance.
Working Principle
The SMBTA64E6327 works by controlling the flow of current between the collector and the emitter. When a voltage is applied to the base of the transistor, it creates a current between the collector and the emitter. This current is controlled by the amount of voltage applied to the base, which in turn can be used to control the voltage at the collector. The working principle of the SMBTA64E6327 can be summarised in the following steps:
- When the base voltage is low, the current between the collector and the emitter is low.
- When the base voltage is increased, the current between the collector and the emitter is increased.
- The increased current causes the collector voltage to be higher than the emitter voltage.
- The voltage difference between the collector and the emitter is used to control the current flow.
The SMBTA64E6327 can be used in either a common emitter configuration or a common base configuration. In a common emitter configuration, the SMBTA64E6327 functions as an amplifier and in a common base configuration, it functions as a buffer. In either configuration, the SMBTA64E6327 is capable of controlling the flow of current between the collector and the emitter voltage.
The SMBTA64E6327 is a high-performance transistor that offers superior features and performance when compared to other similar devices. Its high gain, low voltage drop and fast switching speed make it a popular choice for many applications. With its wide operating range and robust design, it is suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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