Allicdata Part #: | SMBT3904E6327HTSA1TR-ND |
Manufacturer Part#: |
SMBT3904E6327HTSA1 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN 40V 0.2A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 330m... |
DataSheet: | SMBT3904E6327HTSA1 Datasheet/PDF |
Quantity: | 24000 |
3000 +: | $ 0.02193 |
6000 +: | $ 0.01978 |
15000 +: | $ 0.01720 |
30000 +: | $ 0.01548 |
75000 +: | $ 0.01376 |
150000 +: | $ 0.01147 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 330mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBT3904 |
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The SMBT3904E6327HTSA1 is a single bipolar junction transistor (BJT) device, designed for general application purposes. The SMBT3904E6327HTSA1 is a PNP transistor, meaning that the majority carriers are electrons, and the collector current is composed of these electrons flowing from the collector to the emitter. When calculating the power output, the PNP transistor is able to achieve a current gain, also known as its Beta, of up to 4.0.
The main feature of the SMBT3904E6327HTSA1 is its negligible reverse bias current and low noised. This makes it suitable for a wide range of applications, ranging from switching and amplifier circuits, to linear circuits and other high-current applications. For example, it can be used for switching and amplification in audio-visual equipment, for instance, in the IF amplification and oscillator circuits of a television. In addition, it can be used in the transmit and receive circuits of a radio receiver. Other applications include relay and timer circuits, logic switching circuits, power supply circuits, and instrumentation applications.
The SMBT3904E6327HTSA1 works by controlling the flow of current through it by using the base-emitter junction. The base-emitter junction acts as a controllable current source or sink, depending on the bias conditions applied. When a forward bias is applied to the base-emitter junction, the current flow across the transistor increases, a phenomenon known as saturation. When the voltage level applied to the base-emitter junction reaches a certain level, called the saturation voltage, the current across the transistor saturates, stopping any further increase in current flow. However, if the applied voltage is low enough, the current flow across the transistor decreases, the phenomenon known as cut-off. This allows the manufacturer to control the current flow across the transistor, and therefore its gain.
In addition, the SMBT3904E6327HTSA1 has a built-in current limiter. This is designed to prevent excessive current flow in the event of a short circuit or overloading. The current limiter can also ensure that the bias conditions applied to the base-emitter junction remain within certain limits, so as not to affect the gain. This makes the SMBT3904E6327HTSA1 suitable for linear applications.
In summary, the SMBT3904E6327HTSA1 single bipolar junction transistor is designed for general application purposes and can be used in a wide variety of applications, such as in amplifier and switching circuits, relay and timer circuits, as well as logic switching circuits. It has a very low reverse bias current and a built-in current limiter, making it suitable for linear applications. Thanks to its Beta (or current gain) it is also capable of achieving high power outputs.
The specific data is subject to PDF, and the above content is for reference
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