Allicdata Part #: | SMBT3906DW1T1GOSTR-ND |
Manufacturer Part#: |
SMBT3906DW1T1G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP 40V 0.2A SC88 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 20... |
DataSheet: | SMBT3906DW1T1G Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.06953 |
6000 +: | $ 0.06531 |
15000 +: | $ 0.06110 |
30000 +: | $ 0.05618 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363, SC70 |
Base Part Number: | MBT3906D |
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The SMBT3906DW1T1G is a device within the field of bipolar transistors arrays. This section explains the application field of the SMBT3906DW1T1G, and its working principle.
Application Field
The SMBT3906DW1T1G is a PNP array transistor which is used in a variety of electronic devices, such as digital circuits and switching regulators. This transistor array has a voltage breakdown of 45 V, and a collector-base voltage rating of 30 V.
The SMBT3906DW1T1G is also used in multiple electronic applications due to its features such as its low power consumption, and high switching speeds.
For example, it can be used in power supplies for motor drives, light emitting diode (LED) drivers, laser diode drivers, solid state relays, and switching regulators.
This device is a surface mount device (SMD) and is available in the plate-through hole packaging. The transistor array also is also RoHS compliant and has a maximum operating junction temperature rating of 175°C.
Working Principle
The working of the SMBT3906DW1T1G is based on the working of a PNP transistor, which is a three-layer semiconductor device. The three layers are known as the semiconductor base layer, the emitter layer, and the collector layer.
In the PNP transistor, electrons move from the emitter to the collector when an external voltage is applied to the base layer. The external voltage on the base layer controls the flow of electrons, and thus can be used to control the output signal of the transistor.
The SMBT3906DW1T1G is a PNP transistor array, which means that it is composed of multiple PNP transistors with identical characteristics. This makes it easier to control multiple input and output signals with a single transistor array.
For example, the SMBT3906DW1T1G can be used to switch multiple LEDs on and off using a single input signal, or to multiplex multiple input signals into a single output signal.
Conclusion
The SMBT3906DW1T1G is a PNP transistor array that is used for a variety of electronic applications. It is available in an SMD package, and can be used to switch multiple LEDs on and off, or to multiplex multiple input signals into a single output signal. This device has a voltage breakdown of 45 V, and a collector-base voltage rating of 30 V. It is RoHS compliant and has a maximum operating junction temperature rating of 175°C. The working principle of the device is based on the working principle of a PNP transistor.
The specific data is subject to PDF, and the above content is for reference
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GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...