SMBTA42E6327HTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 30mA, 10V
Power - Max:	360mW
Frequency - Transition:	70MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	MBTA42

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SMBTA42E6327HTSA1 is a low voltage, high gain medium power bipolar junction transistor of the NPN type. It belongs to the single type of transistors and is designed for application in low to medium power output stages. The transistor comes in a can package and has a collector rating of 1.25A and coupled with a high current gain and low collector-emitter saturation voltage it is very suitable for low power and medium voltage applications.The SMBTA42E6327HTSA1 is a low voltage, high gain transistor that has medium power output stages at collector currents ranging from 5 to 500mA. The transistor has an average current gain up to 175 and is capable of handling a maximum of 1.25A at collector currents ranging from 5 to 500mA. Furthermore, the transistor has a maximum collector-emitter voltage of 50V and the switching time is extremely fast at 60ns. The operating principle of the SMBTA42E6327HTSA1 transistor is quite simple. When a voltage is applied to the base-emitter junction, current flows through the transistor. This current is amplified by the small base current and allows a larger current to flow from the collector to the emitter. Due to the amplified current and voltage, this type of transistor is very useful for amplifying or switching signals. The SMBTA42E6327HTSA1 is suitable for applications that need low voltage and high gain. These include audio amplifiers, switch applications, amplifier design, power supply design, and instrumentation. Additionally, this type of transistor is also suitable for use in a variety of electronic circuit devices such as alarm systems, signal switching circuits, control panels, and amplifiers. When using the SMBTA42E6327HTSA1, one must ensure that the operating conditions are within the device\'s parameters. This involves choosing the right base voltage, collector voltage, and emitter voltage. The right operating temperature should also be taken into account, which must remain between -65 and +200 degrees Celsius. The SMBTA42E6327HTSA1 is a low voltage, high gain transistor that offers medium power output stages at collector currents ranging from 5 to 500mA. It is suitable for use in audio amplifiers, switch applications, amplifier design, power supply design, and instrumentation. The transistor must be operated within its parameters, and the operating temperature must remain between -65 and +200 degrees Celsius. With careful design, this type of transistor can provide excellent performance.

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