SMBTA06UPNE6327HTSA1 Discrete Semiconductor Products

The SMBTA06UPNE6327HTSA1 is a bi-polar array field effect transistor (FET) manufactured by Semibridge Corporation & National Semiconductor. It is a family of monolithic, low-cost and high-performance devices designed for analog, mixed-signal and digital applications. The SMBTA06UPNE6327HTSA1 is an array of 4 FETs with a self-biased high-performance amplifier.

Applications

The SMBTA06UPNE6327HTSA1 is widely used in analog, mixed-signal and digital applications such as control electronics, data converters, radio frequency (RF) amplifiers and communication systems. This device can also be used as a component in circuits for driver amplifiers, analog-todigital convertors, video amplifiers, and various other automotive and consumer applications.

Working Principle

The SMBTA06UPNE6327HTSA1 family of devices utilize a common-gate topology to provide a self-biased, high-performance amplifier. The device consists of four distinct FETs that are connected in an H-bridge configuration. This allows each of the four FETs to act as an individual amplifier, which facilitates the amplification of low-level signals. The H-bridge configuration provides high gain, low power consumption, and low distortion. Furthermore, the self-biased output is not affected by the supply voltage and allows for low-voltage operation.

The self-biased output of the SMBTA06UPNE6327HTSA1 enables the array to be used for a wide range of applications, including audio and video amplifiers, data converters, and embedded control systems. The device also provides low-distortion output for use in RF and wireless communications applications. Additionally, the FETs can be used as frequency or phase shifters or as impedance transformers. Furthermore, the device is well-suited for sensing applications where it can provide amplifier gain or voltage amplification.