SMBT3904PNH6327XTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	250mW
Frequency - Transition:	250MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-VSSOP, SC-88, SOT-363
Supplier Device Package:	PG-SOT363-6

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The SMBT3904PNH6327XTSA1 and Its Application Field and Working Principle

The SMBT3904PNH6327XTSA1 is a transistor array device, belonging to theTransistors - Bipolar (BJT) - Arrays family, and it is manufactured by Eurotech Components. It is a high voltage transistor that is designed to provide good functional stability and performance in high temperature applications.This transistor array uses a PN junction between the emitter and collector electrodes, enabling the device to switch large amounts of current. The PN junction allows the current to flow three-dimensionally to create high voltage and current levels over a wide area, making it suitable for a variety of applications.The SMBT3904PNH6327XTSA1 has a wide variety of applications. Its PN junction provides a very fast switching speed, making it ideal for faster applications such as digital logic circuits, as well as switches and relays. Its large current capacity and high switching speed also make it suitable for driving large motors and other high-current applications. The large junction size also makes this device suitable for high thermal loads and high-voltage protection circuits.From a technological standpoint, the SMBT3904PNH6327XTSA1 is manufactured using the most advanced laser beam lithography processes available, enhancing the device’s performance and providing superior power handling capabilities. In addition, this device provides a high level of protection against ESD and EMI.The SMBT3904PNH6327XTSA1 has a two-stage operation, consisting of an emitter and collector electrode. The emitter electrode is connected to the positive supply, while the collector electrode is connected to the negative supply. When a positive voltage is applied to the base electrode, a current path is formed between the emitter and the collector electrodes. This current then flows between the emitter and the collector electrodes.The most common application of this device is its use as an electronic switch. When a positive voltage is applied to the base electrode, the current starts flowing, and then a new path is formed between the emitter and the collector electrodes. This creates a conducting path, which in turn switches on the device. When a negative voltage is applied, the current starts flowing in the opposite direction and the device switches off.The SMBT3904PNH6327XTSA1 is also used in high speed switching applications, such as analog to digital converters. In this application, the high speed switching of the device allows fast and accurate conversion of analog signals into digital signals.Overall, the SMBT3904PNH6327XTSA1 is an excellent choice for applications requiring high voltage and fast switching, such as digital logic circuits, switches and relays, motor drive circuits, and high thermal load protection circuits. Its high current capacity and superior protection features make it a superior device compared to other transistors, and its precision laser beam lithography process ensures superior performance. Its application field and working principle make it an excellent choice for a wide variety of electronic systems.

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