SPI20N60C3HKSA1 Allicdata Electronics
Allicdata Part #:

SPI20N60C3HKSA1-ND

Manufacturer Part#:

SPI20N60C3HKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 20.7A TO-262
More Detail: N-Channel 600V 20.7A (Tc) 208W (Tc) Through Hole P...
DataSheet: SPI20N60C3HKSA1 datasheetSPI20N60C3HKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The SPI20N60C3HKSA1 is a single high-voltage MOSFET, produced by INFENION, widely used in various fields. This type of semiconductor, while being widely used, has a wide range of applications, such as, power management, switching, power switching, and more. The SPI20N60C3HKSA1 is capable of a wide array of operations including: high speed switch, high current switching, high-voltage DC (direct current) and AC (alternating current) power management, and more. This transistor type is rated for up to the 600-Volt DC supply and can handle up to 20A of current.

The –Vgs ratings of the SPI20N60C3HKSA1 are -8 volts for the drain. This rating ensures its ability to operate under a wide range of potentials, making this MOSFET suitable for many different applications. Its maximum Vds (drain-source voltage) is 600 volts, meaning that it can handle AC or DC currents at high voltage levels. Furthermore, its maximum Vgs (gate-source voltage) of -20 volts helps it to switch from high resistance to low resistance quickly and efficiently in order to produce a good current conduction across the junction.

The mode of operation of the SPI20N60C3HKSA1 is similar to that of a switch, meaning that when a voltage is placed across its gate, the FET can pass an electric current from the source to the drain. This type of transistor is known as a depletion-mode MOSFET meaning that it has full conduction with a negative voltage across its gate.

The working principle of the SPI20N60C3HKSA1 is based on the depletion layer created by the gate voltage. When a high negative voltage is applied to the gate, it causes the depletion layer to widen and begins to interrupt the flow of electrons by repelling them away. This limits the current flow and regulates it below the current vgs rating. Similarly, when a high positive voltage is applied to the gate, the depletion layer narrows, allowing electrons to flow more freely, and thus increase the current.

The SPI20N60C3HKSA1 is a great device to have in current power management and switching applications. Its durable design and great operating temperature range make this MOSFET a reliable option for controlling heavy currents. Furthermore, the device is also able to provide excellent frequency control and power rating, thanks to its high maximum Vgs rating of -20 volts.

The SPI20N60C3HKSA1 is suitable for a wide variety of applications, from automotive and aerospace power management to computer power supplies and industrial motor control. It is also a good candidate for high voltage DC and AC switching due to its 600-Volt DC rating and 20A current carrying capability. The device is also capable of being used for frequency and signal control as well, making it one of the more versatile MOSFETs available.

The specific data is subject to PDF, and the above content is for reference

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