
Allicdata Part #: | SPI20N60CFDHKSA1-ND |
Manufacturer Part#: |
SPI20N60CFDHKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 20.7A TO-262 |
More Detail: | N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 124nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 13.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20.7A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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SPI20N60CFDHKSA1 application field and working principle
SPI20N60CFDHKSA1 is a type of Insulated Gate Bipolar Transistor (IGBT). It is a three-terminal power semiconductor device that consists of an N-channel Enhancement Mode Field Effect Transistor (MOSFET) and PNP transistor integrated on the same chip. Specifically, SPI20N60CFDHKSA1 is a single N-Channel MOSFET. It offers excellent performance up to 20A/600V thanks to its robust design and low gate charge. The SPI20N60CFDHKSA1 is widely used in many application fields, such as motor drives, power inverters, solar inverters, power supplies, and UPSs.
The working principle of MOSFETS is based on a MOS (metal-oxide-semiconductor) structure, which consists of a gate, a source, and a drain. The gate is insulated from the other two terminal by a thin gate oxide layer. When a voltage is applied to the gate, the electric field is generated, which modifies the conductivity of the semiconductor channel connecting the source and the drain. As the applied gate-source voltage increases, the conductivity of the MOSFET increases. In the case of SPI20N60CFDHKSA1, it is an N-Channel MOSFET, which means the when the gate-source voltage is increased, the number of electrons in the channel and therefore the current passing through it increases as well.
The SPI20N60CFDHKSA1 is designed for use in power switching applications, such as motor drives, power inverters, solar inverters, power supplies, and UPSs. Its low on-state resistance and low gate charge make it ideal for high-frequency switching applications, such as resonant converters and high-voltage power supplies. It also features a high ruggedness avalanche rating, making it suitable for high-current, high-voltage applications.
In conclusion, SPI20N60CFDHKSA1 is a high-performance N-Channel Single MOSFET that is used in a wide variety of power switching applications. Its robust design and low gate charge make it an ideal choice for applications that require a high frequency and high-current switching capability. It is suitable for applications such as motor drives, power inverters, solar inverters, power supplies, and UPSs.
The specific data is subject to PDF, and the above content is for reference
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