SPI20N60CFDHKSA1 Allicdata Electronics
Allicdata Part #:

SPI20N60CFDHKSA1-ND

Manufacturer Part#:

SPI20N60CFDHKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 20.7A TO-262
More Detail: N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole P...
DataSheet: SPI20N60CFDHKSA1 datasheetSPI20N60CFDHKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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SPI20N60CFDHKSA1 application field and working principle

SPI20N60CFDHKSA1 is a type of Insulated Gate Bipolar Transistor (IGBT). It is a three-terminal power semiconductor device that consists of an N-channel Enhancement Mode Field Effect Transistor (MOSFET) and PNP transistor integrated on the same chip. Specifically, SPI20N60CFDHKSA1 is a single N-Channel MOSFET. It offers excellent performance up to 20A/600V thanks to its robust design and low gate charge. The SPI20N60CFDHKSA1 is widely used in many application fields, such as motor drives, power inverters, solar inverters, power supplies, and UPSs.

The working principle of MOSFETS is based on a MOS (metal-oxide-semiconductor) structure, which consists of a gate, a source, and a drain. The gate is insulated from the other two terminal by a thin gate oxide layer. When a voltage is applied to the gate, the electric field is generated, which modifies the conductivity of the semiconductor channel connecting the source and the drain. As the applied gate-source voltage increases, the conductivity of the MOSFET increases. In the case of SPI20N60CFDHKSA1, it is an N-Channel MOSFET, which means the when the gate-source voltage is increased, the number of electrons in the channel and therefore the current passing through it increases as well.

The SPI20N60CFDHKSA1 is designed for use in power switching applications, such as motor drives, power inverters, solar inverters, power supplies, and UPSs. Its low on-state resistance and low gate charge make it ideal for high-frequency switching applications, such as resonant converters and high-voltage power supplies. It also features a high ruggedness avalanche rating, making it suitable for high-current, high-voltage applications.

In conclusion, SPI20N60CFDHKSA1 is a high-performance N-Channel Single MOSFET that is used in a wide variety of power switching applications. Its robust design and low gate charge make it an ideal choice for applications that require a high frequency and high-current switching capability. It is suitable for applications such as motor drives, power inverters, solar inverters, power supplies, and UPSs.

The specific data is subject to PDF, and the above content is for reference

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