
Allicdata Part #: | SPI21N10IN-ND |
Manufacturer Part#: |
SPI21N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 21A TO-262 |
More Detail: | N-Channel 100V 21A (Tc) 90W (Tc) Through Hole PG-T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 44µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 865pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38.4nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPI21N10 is a well-known and widely used transistor that is available in many electronics stores. It is an N-channel power MOSFET (metal-oxide-semiconductor field-effect transistor) that is often used in power supply and other power management applications in a variety of electronic devices, including computers and consumer electronics. It is available in a TO-220 package and offers very high current and power handling capabilities up to 10A. The SPI21N10 is ideal for use in applications that require low thermal resistance, reliable operation and good performance.
The SPI21N10 is a three-terminal device, which means it consists of three pins: the gate, the source and the drain. The gate of the device is connected to the input voltage of the circuit, while the source and drain are connected to the load. The device operates as a switch, allowing current to flow when the appropriate voltage is applied to the gate. The on-resistance of the device, which is a measure of its conductivity, can be controlled by the gate voltage, making it useful for applications such as voltage regulation and motor control.
As a power MOSFET, the SPI21N10 is also capable of withstanding high voltage conditions, making it suitable for use in high-voltage applications such as power supplies. The device also features fast switching speed, enabling its use in high-frequency switching applications. Furthermore, due to its low power consumption, it is suitable for use in energy-saving devices such as LED illumination.
In addition to its use as a power MOSFET, the SPI21N10 can also be used as a voltage regulator, making it suitable for use in applications such as automotive power systems and other power management applications. As a voltage regulator, the device can be used to maintain a consistent output voltage, regardless of environmental conditions or load changes. It is also possible to use the device as a load switch, allowing the device to be turned on and off at a moment\'s notice.
The SPI21N10 is an efficient and reliable power MOSFET that is widely used in a variety of applications. It is available in a TO-220 package and offers high current and power capability, fast switching speed, and low power consumption. Furthermore, it can also be used as a voltage regulator or a load switch, making it a versatile device for a wide range of applications.
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