SPI20N65C3XKSA1

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SPI20N65C3XKSA1 is one of the latest MOSFETs (metal-oxide-semiconductor field-effect transistors) released by Vishay Inc. It is a single, three-terminal device, featuring an exceptionally low on-resistance and a low gate charge that ensure high performance and robustness. This product has wide-ranging applications, specifically in automotive and energy-saving scenarios. Its working principle involves the flow of charge carriers between the gate, body and source.

Applications

SPI20N65C3XKSA1 is suited for automotive and switching applications, in which very low on-resistance coupled with low gate charge is critical. It features a current rating of 20A and can withstand a high voltage of 650V, making it suitable for energy efficient AC and DC motor drives, inverters and solar energy conversion applications. Additionally, its small compact design facilitates easy installation and long-term reliability. This product is particularly useful for its ability to absorb high volume of current and turn it off with a single low voltage signal applied at the gate.

Working Principle

The SPI20N65C3XKSA1 MOSFET is a unipolar device, which means it works by controlling the flow of charge carriers between the gate and source. The gate is the control terminal, which is electrically connected to the source by a thin oxide layer. When the voltage applied to the gate is less than the source voltage, it forms a conducting channel between the source and the drain, allowing current to flow. Increasing the voltage applied to the gate will decrease the size of the conducting channel, thus reducing the conduction current.

Advantages

The SPI20N65C3XKSA1 has an exceptionally low on-resistance of just 0.017 Ohm, which helps reduce power dissipation. This makes it ideal for applications in which power efficiency is paramount. Additionally, it features a low gate charge which means it requires comparatively less amount of power to turn it on and off, resulting in faster switching and low switching losses. This product also boasts a fast switching speed of 17ns, making it suitable for power-hungry applications.

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