Allicdata Part #: | SPI20N60C3XKSA1-ND |
Manufacturer Part#: |
SPI20N60C3XKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 20.7A TO-262 |
More Detail: | N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole P... |
DataSheet: | SPI20N60C3XKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO262-3-1 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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The SPI20N60C3XKSA1 is a field-effect power transistor that is commonly used in applications for regulating high-speed current in power circuits. It is part of the Siliconix Power MOSFET line, which is a series of high-performance, shortcircuiting resistant power switches designed to provide reliable and consistent power switch control in demanding applications. The active element of the power transistor is a metal-oxide semiconductor field-effect transistor, or MOSFET, which makes it a valuable device in power supply and motor control circuits.
One of the advantages of the SPI20N60C3XKSA1 is that it has a low Gate-source resistance (RGS) compared to other transistors. This makes it well-suited for high-speed switching applications, such as power converters, drives, and lighting control circuits. The low RGS also allows for fast switching speeds, which are important in applications where speeds higher than 200kHz are necessary. Additionally, the SPI20N60C3XKSA1 has a low internal capacitance (Cgd) and a high critical diode forward current.
The working principle of the SPI20N60C3XKSA1 is based on the enhancement-mode MOSFET concept. When a positive or negative current is applied to the Gate terminal, the depletion region of the MOSFET is reduced, which results in a decreased resistance in the source/drain channel. This, in turn, allows increased flow of electrons from the source to the drain and an increased current from the drain to the source. By controlling the current flowing through the Gate terminal of the MOSFET, the SPI20N60C3XKSA1 can be used as a switch for controlling the current flowing through power circuits.
The SPI20N60C3XKSA1 is well-suited for a wide range of applications, such as power circuit regulation, motor control, LED lighting, and high-speed switching. Its low Gate-source resistance, low internal capacitance, and high critical diode forward current make it an ideal choice for applications that require fast switching and high current handling. Additionally, its MOSFET technology allows for improved efficiency and reliability, making it a valuable component in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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