SQD100N04-3M6_GE3 Allicdata Electronics
Allicdata Part #:

SQD100N04-3M6_GE3-ND

Manufacturer Part#:

SQD100N04-3M6_GE3

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 100A TO252AA
More Detail: N-Channel 40V 100A (Tc) 136W (Tc) Surface Mount TO...
DataSheet: SQD100N04-3M6_GE3 datasheetSQD100N04-3M6_GE3 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.47926
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQD100N04-3M6_GE3 is an advanced single-gate transistor belonging to the MOSFET (metal-oxide-semiconductor field-effect transistor) class of transistors. Strictly speaking, it is a single-level, low power version of its top-tier family member, the dual-level SQD200N08-3M6_GE3. As such, the utilities and applications of the SQD100N04-3M6_GE3 transistor are of a practical nature, generally related to energy consumption control and power distribution. In order to understand its utility, it is important to first consider the principle on which it operates.

In its single-gate configuration, the SQD100N04-3M6_GE3 transistor has three basic terminals. These are source, drain, and gate. By properly regulating the voltage supplied to these terminals, the flow of current through the transistor can be controlled and regulated. Specifically, the gate terminal acts as a switch, allowing the transistor to open and close as required. Depending on the voltage applied to the gate terminal, either the source or drain terminal can become active, allowing the current to flow through. In the case of the SQD100N04-3M6_GE3 transistor, this open-close action is extremely efficient, allowing for significant power savings and greater control of current flow.

The MOSFET configuration of the SQD100N04-3M6_GE3 transistor also allows for the use of a low gate current, further minimizing power consumption. In addition, the single-gate design allows for relatively low capacitance between the gate and source, meaning that it has a high frequency response and can be used in high-frequency applications. This is especially useful for applications involving the transmission and/or conversion of digital signals.

Most broadly, the SQD100N04-3M6_GE3 transistor is best suited for applications where low power consumption and high-frequency response are required. This could include everything from digital audio, video, and data transmission to power regulation in energy-sensitive devices. More specific applications include digital-to-analog conversion, radio-frequency circuit design, and power regulation in automotive and industrial electronics. In all of these applications, the SQD100N04-3M6_GE3 is able to leverage its single-gate configuration to provide significant power savings and a fast, reliable response.

Ultimately, the SQD100N04-3M6_GE3 transistor is an efficient, reliable solution for a variety of power regulation and data transmission applications. Its single-gate configuration provides a fast response and low power consumption, making it an ideal choice for a wide range of tasks. For this reason, it is a popular option for industrial and automotive applications, as well as for digital to analog conversion in audio, video, and data processing.

The specific data is subject to PDF, and the above content is for reference

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