Allicdata Part #: | SQD100N04-3M6_GE3-ND |
Manufacturer Part#: |
SQD100N04-3M6_GE3 |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 100A TO252AA |
More Detail: | N-Channel 40V 100A (Tc) 136W (Tc) Surface Mount TO... |
DataSheet: | SQD100N04-3M6_GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.47926 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQD100N04-3M6_GE3 is an advanced single-gate transistor belonging to the MOSFET (metal-oxide-semiconductor field-effect transistor) class of transistors. Strictly speaking, it is a single-level, low power version of its top-tier family member, the dual-level SQD200N08-3M6_GE3. As such, the utilities and applications of the SQD100N04-3M6_GE3 transistor are of a practical nature, generally related to energy consumption control and power distribution. In order to understand its utility, it is important to first consider the principle on which it operates.
In its single-gate configuration, the SQD100N04-3M6_GE3 transistor has three basic terminals. These are source, drain, and gate. By properly regulating the voltage supplied to these terminals, the flow of current through the transistor can be controlled and regulated. Specifically, the gate terminal acts as a switch, allowing the transistor to open and close as required. Depending on the voltage applied to the gate terminal, either the source or drain terminal can become active, allowing the current to flow through. In the case of the SQD100N04-3M6_GE3 transistor, this open-close action is extremely efficient, allowing for significant power savings and greater control of current flow.
The MOSFET configuration of the SQD100N04-3M6_GE3 transistor also allows for the use of a low gate current, further minimizing power consumption. In addition, the single-gate design allows for relatively low capacitance between the gate and source, meaning that it has a high frequency response and can be used in high-frequency applications. This is especially useful for applications involving the transmission and/or conversion of digital signals.
Most broadly, the SQD100N04-3M6_GE3 transistor is best suited for applications where low power consumption and high-frequency response are required. This could include everything from digital audio, video, and data transmission to power regulation in energy-sensitive devices. More specific applications include digital-to-analog conversion, radio-frequency circuit design, and power regulation in automotive and industrial electronics. In all of these applications, the SQD100N04-3M6_GE3 is able to leverage its single-gate configuration to provide significant power savings and a fast, reliable response.
Ultimately, the SQD100N04-3M6_GE3 transistor is an efficient, reliable solution for a variety of power regulation and data transmission applications. Its single-gate configuration provides a fast response and low power consumption, making it an ideal choice for a wide range of tasks. For this reason, it is a popular option for industrial and automotive applications, as well as for digital to analog conversion in audio, video, and data processing.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQD100N03-3M4_GE3 | Vishay Silic... | 0.53 $ | 1000 | MOSFET N-CH 30V 100A TO25... |
SQD100N04-3M6_GE3 | Vishay Silic... | 0.53 $ | 1000 | MOSFET N-CH 40V 100A TO25... |
SQD15N06-42L_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 15AN-Chan... |
SQD19P06-60L_GE3 | Vishay Silic... | -- | 4000 | MOSFET P-CH 60V 20A TO252... |
SQD100N02-3M5L_GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET N-CH 20V 100A TO25... |
SQD10N30-330H_GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET N-CH 300V 10A TO25... |
SQD19P06-60L_T4GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET P-CH 60V 20A TO252... |
SQD100N04-3M6L_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 100A TO25... |
SQD100N03-3M2L_GE3 | Vishay Silic... | 0.55 $ | 1000 | MOSFET N-CH 30V 100A TO25... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...