Allicdata Part #: | SQD19P06-60L_T4GE3-ND |
Manufacturer Part#: |
SQD19P06-60L_T4GE3 |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 20A TO252AA |
More Detail: | P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-2... |
DataSheet: | SQD19P06-60L_T4GE3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.43818 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1490pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 19A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQD19P06-60L_T4GE3 is a FET, also known as a Field Effect Transistor (FET). A FET is a semiconductor device typically used to control an electrical signal. It works by controlling the flow of electrons through a channel between a source and a drain. This channel is created by the application of a voltage to the gate terminal, which alters the conductivity of the channel. The SQD19P06-60L_T4GE3 is a single transistor, meaning it has one gate and one drain-source connection.
The SQD19P06-60L_T4GE3 is rated at 60 amperes of gate-drain current and 60 volts of drain-source voltage. It has a breakdown voltage of 160 volts and an RDS(on) of 0.025 ohms. This means that it offers very high current capacity and low on-resistance, making it extremely suitable for use in power switches, motor controls and DC/DC converters. It is also suitable for multiple applications such as motor control, synchronous rectification, motor starting and other applications where high current and low on-resistance are desired.
The SQD19P06-60L_T4GE3 works by changing the resistance of a channel between the source and the drain when a voltage is applied to the gate. This is known as the Enhancement Mode of operation. As the voltage applied to the gate increases, more current is allowed to flow between the source and the drain, causing the resistance in the channel to decrease. As the voltage is decreased, the channel becomes less conductive and the resistance increases again. This process can be used to control the current flow of a circuit and is the basis of most FET transistors.
The SQD19P06-60L_T4GE3 is typically used in power switching and motor control applications, but can also be used for a variety of other applications where high current and low on-resistance is desired. It is also used in synchronous rectification, motor starting, and other applications where high current and low on-resistance are desired. It is also compatible with logic switching, making it ideal for use in logic circuits.
The SQD19P06-60L_T4GE3 is a reliable and highly efficient device for power switching and motor control applications. It has a low on-resistance and high current capacity, making it ideal for use in applications where high current capacity and low on-resistance is desired. Additionally, it is also compatible with logic switching, making it ideal for use in logic circuits.
The specific data is subject to PDF, and the above content is for reference
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