Allicdata Part #: | SQD19P06-60L_GE3TR-ND |
Manufacturer Part#: |
SQD19P06-60L_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 20A TO252 |
More Detail: | P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-2... |
DataSheet: | SQD19P06-60L_GE3 Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1490pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 19A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQD19P06-60L_GE3 is a single N-channel MOSFET Field Effect Transistor (FET). It belongs to a range of unique device types and contributes to the ever-expanding semiconductor industry. This particular type of transistor is useful in applications like power industrial system switches and as popular automotive circuits. It provides a robust and reliable solution in both cases. But before that, let’s first understand its application field and working principle.
Application Field:
The SQD19P06-60L_GE3 is mainly employed in various automotive circuits and switching applications. It can be used in the primary choke coil of security systems, controllers, and various charging devices. It is an ideal solution for designs that require smooth switchovers between functions like digital audio, digital video, security systems, and control signals. It has a rugged design that ensures reliability and increased performance under harsh environments.
The SQD19P06-60L_GE3 is also useful in industrial power applications like single-phase motor control systems, electric machinery, switching systems, and power supply loads. It is a robust and reliable solution for power switches. It provides a perfect balance between on-resistance (Rds on) and leakage current. Moreover, it also provides an integrated gate protection element with a long lifespan.
Working Principle:
The working principle of the SQD19P06-60L_GE3 transistor is quite simple. It uses an N-Channel MOSFET to control the current flow in and out of the device. The gate of the MOSFET is activated by a voltage applied to its gate pin. When the gate receives a positive voltage, the transistor turns On and a large current flow is allowed between its drain and source pin. When the gate voltage is decreased and the voltage drops to 0V, the transistor turns off, stopping the current flow.
The SQD19P06-60L_GE3 also has an integrated protection feature. Its gate protection element prevents any damage due to electrostatic discharge (ESD) and overvoltage. This protects the device from any external influence. It even limits the gate current to a safe level, thus ensuring device life.
The SQD19P06-60L_GE3 is available in a 5-pin TO-253 package. The pins can be used to connect the device to external components. The Vin pin is used for connecting the power supply or battery and the Vout pin is used for connecting the device to the load or output circuit. The drain and source pins can be used to control the current flow in and out of the device.
The SQD19P06-60L_GE3 is a silicon-oxide based semiconductor device that is designed to provide a low on-resistance Rds(on), a wide operable frequency range, and high current-carrying capacity. Its rugged design and reliable performance make it ideal for power switching applications in various sectors.
Conclusion:
The SQD19P06-60L_GE3 is a versatile single N-channel MOSFET Field Effect Transistor (FET). It finds applications in industrial power supplies, automotive circuits, and switching applications. It has a rugged design, low on-resistance (Rds on), and integrated gate protection element that ensures reliable performance even in harsh environments. Its pins can be used to connect the device to external components for powering or controlling the current flow. Hence, this transistor is a perfect choice for industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQD100N03-3M4_GE3 | Vishay Silic... | 0.53 $ | 1000 | MOSFET N-CH 30V 100A TO25... |
SQD100N04-3M6_GE3 | Vishay Silic... | 0.53 $ | 1000 | MOSFET N-CH 40V 100A TO25... |
SQD15N06-42L_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 15AN-Chan... |
SQD19P06-60L_GE3 | Vishay Silic... | -- | 4000 | MOSFET P-CH 60V 20A TO252... |
SQD100N02-3M5L_GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET N-CH 20V 100A TO25... |
SQD10N30-330H_GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET N-CH 300V 10A TO25... |
SQD19P06-60L_T4GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET P-CH 60V 20A TO252... |
SQD100N04-3M6L_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 100A TO25... |
SQD100N03-3M2L_GE3 | Vishay Silic... | 0.55 $ | 1000 | MOSFET N-CH 30V 100A TO25... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...