SQD100N04-3M6L_GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQD100N04-3M6L_GE3 is type of transistor, specifically known as a field effect transistor (FET). It is classified as a single or discrete MOSFET, which is a type of transistor that is commonly used for several applications in electronic circuits. The SQD100N04-3M6L_GE3 offers a variety of features that make it and other transistors, such as N-channel or P-channel, highly favored by electrical engineers when designing circuits.

FETs are widely used in amplifier and switching designs. They are three terminal devices, with the gate as the controlling element. An input voltage can control the gate voltage, which determines whether the device is turned on or off. When the gate voltage is low, the device is in the "off" state, and no current can flow between the source and drain. When the gate voltage is high, the device is in the "on" state, and a current can flow from source to drain.

The advantage of FETs is that, unlike an insulated gate bipolar transistor (IGBT), the gate voltage does not have to be equal to the source voltage for a FET to operate. This makes them simpler and cheaper to use than other types of transistors. This feature also makes them energy efficient, since less power is required to switch them on and off.

The SQD100N04-3M6L_GE3 is a specific type of discrete MOSFET with a few distinguishing characteristics. It has a wide voltage range between 1.8V and 100V and a very low on-resistance of only 0.018 Ohms. It also has a fast rise time of only 5.3ns, making it an ideal choice for applications that need to handle high currents. In addition, this device is also suitable for low power applications, since it only draws 1mA of current.

These features make the SQD100N04-3M6L_GE3 popular for a wide range of applications, from audio amplifier circuits to motor controllers. It is also suitable for applications that require high voltage circuits, as well as for low power circuits.

The SQD100N04-3M6L_GE3 can be used as a switch, since it can control the flow of current through a circuit. When the gate is open, current is allowed to flow through the device from source to drain. When the gate is closed, current is blocked from passing through the device. This makes the SQD100N04-3M6L_GE3 an effective switching device.

In summary, the SQD100N04-3M6L_GE3 is a single discrete MOSFET with a wide voltage range and fast rise time. It has a low on-resistance and is suitable for high and low power applications. It is commonly used as a switch, since it can control the flow of current through a circuit by using gate voltage to regulate it. Using this device in an electronic circuit provides all of the benefits of FETs in a single MOSFET package.

The specific data is subject to PDF, and the above content is for reference