
Allicdata Part #: | 497-17144-ND |
Manufacturer Part#: |
STFU13N80K5 |
Price: | $ 3.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 12A TO220FP |
More Detail: | N-Channel 800V 12A (Tc) 35W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 2100 |
1 +: | $ 3.04290 |
10 +: | $ 2.71719 |
100 +: | $ 2.22787 |
500 +: | $ 1.80401 |
1000 +: | $ 1.52145 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Transistors are widely used in today’s electronics. They are used as switches, amplifiers, and other logic and analog operations. Among transistors, FETs (Field Effect Transistors) are particularly important due to their low power consumption and excellent performance. Furthermore, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) represent a class of FETs that allow for smaller device sizes with higher efficiency compared to other transistors. The STFU13N80K5 is a type of single MOSFET and this article will discuss its usage and working principle.
STFU13N80K5 Usage
The STFU13N80K5 is a single MOSFET specifically designed for power supplies. Its drain to source voltage is rated up to 100V and its total direct current (DC) output can reach 13A. It supports a wide range of operating temperatures, ranging from –55°C—175°C. These features provide excellent switching performance and make the STFU13N80K5 ideal for switching applications and power supplies.
Due to its low RDS(on) (on-state resistance), the STFU13N80K5 offers low power dissipation, even when switching large currents. This ensures better reliability and higher efficiency. Additionally, the STFU13N80K5 offers superior thermal performance and relatively low capacitive charging. This makes it ideal for applications that require fast switching speeds, such as in AC-DC power supplies with high-frequency switching. Lastly, the STFU13N80K5 can withstand electrostatic discharges up to meeting the Human Body Model (HBM) standard. This makes it suitable for automotive applications, where the need for protection against static electricity is higher.
STFU13N80K5 Working Principle
The STFU13N80K5 is a single MOSFET. This means that it consists of a single transistor connected between a source and a drain, with the gate controlling the current flow between the source and drain. The gate-source voltage, VGS, is applied to and drives the current through the device. This is known as the “on-state” and such transistors are generally referred to as “enhancement mode” MOSFETs. When the gate-source voltage is below a certain threshold (VTH), the device will turn off. Thus, by controlling the gate-source voltage, the transistor can be switched on and off.
In the case of the STFU13N80K5, the gate-source voltage (VGS) is rated to 12V. Moreover, the drain-source voltage (VDS) is rated to 100V and the maximum drain current (ID) is 13A. The transistor’s current flow is limited by the RDS(on). This is the “on-state” resistance when the transistor is in the “on-state.” The lower the RDS(on), the less power the transistor will dissipate, resulting in higher efficiency. The STFU13N80K5 offers an RDS(on) of 0.31 ohms, which is one reason why it is so popular in power supplies.
In addition to its low RDS(on), the STFU13N80K5 offers excellent thermal performance. It does this by using a variety of technologies, such as direct composite lead frame with titanium sleeve and low-profile matrix. These technologies help reduce the heat generated and lower the thermal resistance. This in turn allows for better performance at higher frequencies, which is particularly useful for applications that require fast switching speeds.
Summary
The STFU13N80K5 is a single MOSFET used primarily in power supplies. It is designed to provide reliable switching performance, low power dissipation, and excellent thermal performance. Its gate-source voltage (VGS) is rated to 12V and its drain-source voltage (VDS) is rated to 100V. It also has a maximum drain current (ID) of 13A and an RDS(on) of 0.31 ohms. Furthermore, it is capable of meeting the Human Body Model (HBM) standard for static electricity protection. All of these qualities make the STFU13N80K5 a popular choice for power supplies, switching applications, and other similar operations.
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