STFU15NM65N Allicdata Electronics
Allicdata Part #:

497-16109-5-ND

Manufacturer Part#:

STFU15NM65N

Price: $ 3.02
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 12A TO-220FP
More Detail: N-Channel 650V 12A (Tc) 30W (Tc) Through Hole TO-2...
DataSheet: STFU15NM65N datasheetSTFU15NM65N Datasheet/PDF
Quantity: 488
1 +: $ 2.74680
50 +: $ 2.20878
100 +: $ 2.01247
500 +: $ 1.62962
1000 +: $ 1.37437
Stock 488Can Ship Immediately
$ 3.02
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 983pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STFU15NM65N belongs to the family of power field-effect transistors (FETs), and it is one of the first choices for a single-channel MOSFET. It is often used in different applications, such as gate drivers, motor control, or high-frequency switching.

Similar to other FETs, a MOSFET is an electric switch consisting of a source, gate, and drain terminals. For a single-channel MOSFET, however, all the connections are isolated and can only be used with one channel. Thus, when using the STFU15NM65N, the source and drain terminals should be connected to their respective circuits and the gate terminal should be connected to the control signal.

The main property of MOSFETs is the ability to control current flow through the channel between the source and drain with the help of a gate electrode. Once the gate is charged and the voltage exceeds the threshold voltage, the channel is created and current starts to flow. This phenomenon is known as the Field-Effect Transistor (FET) switching action and is very useful for many applications.

The STFU15NM65N can be used for a variety of applications. Since it is a single-channel device, it can be used as a switch in motors and high-frequency switching circuits. It can also be used as a gate driver in power supplies and motor controllers, as well as in high-power audio amplifiers. Because it is also a low-threshold voltage device, it can be used as a high-speed switching element.

The STFU15NM65N works on the principle of capacitive coupling. In this device, the gate electrode and the source electrode are separated by an insulating layer, while the drain electrode is connected to the source electrode by a P-type material. When the gate electrode is positively charged, the native inversion layer (NIL) is created and the P-type material is inserted into the NIL. This causes an accumulation charge at the interface, which then acts as a capacitor and keeps the gate in an ON state for as long as the voltage at the gate is maintained.

In order to turn the STFU15NM65N OFF, the voltage at the gate must be reduced to below the threshold voltage. There are many ways to do this, such as using a voltage divider to reduce the voltage or using external capacitors or resistors in order to provide a smooth waveform at the gate. This is an important part of the circuit design process and must be taken into consideration when designing the circuit.

In summary, the STFU15NM65N is an excellent choice for a single-channel MOSFET. It is a versatile device that can be used for many applications, such as gate drivers, motor control, and high-frequency switching. The STFU15NM65N works on the principle of capacitive coupling and is controlled by varying the voltage at the gate. Therefore, proper circuit design should be ensured to achieve the desired result.

The specific data is subject to PDF, and the above content is for reference

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