STFU24N60M2 Allicdata Electronics
Allicdata Part #:

497-16110-5-ND

Manufacturer Part#:

STFU24N60M2

Price: $ 1.06
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 18A TO-220FP
More Detail: N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-2...
DataSheet: STFU24N60M2 datasheetSTFU24N60M2 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.97068
Stock 1000Can Ship Immediately
$ 1.06
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STFU24N60M2 is a type of Power MOSFET device that contains a single isolated 3-terminal transistor element. It is an insulated-gate field-effect transistor (MOSFET) that features very low RDS(ON) and a very low threshold voltage (VGSth), making it a great choice for power applications such as high-current DC/DC converters and motor drives.

The STFU24N60M2 is a superior device for use in power management applications such as AC-DC power grids and industrial control circuits that require very low RDS(ON) and excellent thermal performance. This device is also ideal for PFC (power factor correction) design applications and rated at a 600V drain-source voltage. It has excellent switching performance, due to its very low gate charge (Qg) and therefore offers extra system design flexibility.

The STFU24N60M2 features a 24A drain current, with a very low on-resistance (RDS(ON) of only 16.8mΩ at a gate-source voltage of 10V. The output power protection circuit is integrated into the STFU24N60M2, eliminating the need for an external protection circuit. In addition, this device offers excellent avalanche and dV/dt ruggedness and a superior safe operating area (SOA).

The STFU24N60M2 has three pins, Gate (G), Source (S) and Drain (D). This device works by applying a voltage across the Gate and Source pins, which causes an electric field to be formed between the Gate and Drain. This electric field controls the flow of current between the Drain and Source pins.

The device has an input impedance between the Gate and Source pin of approximately 1MΩ which makes it very well suited for designs requiring high levels of input impedance. Additionally, in comparison to BJTs, the MOSFET is able to turn on faster, and with lower gate drive voltages, making it an excellent choice for high switching frequency applications.

The STFU24N60M2 is commonly used in power supplies, inverters, switching regulators, motor drives and other DC/DC conversion applications. It is especially useful as a driver in power MOSFET and IGBT circuits. It is ideal for use in consumer, industrial and automotive applications.

The STFU24N60M2 has been designed to provide a wide range of features including very low RDS(ON), high-speed switching, low gate charge (Qg) and a high current handling capability. This device is well suited for a variety of Switch-Mode Power Supply (SMPS) applications. With its high current handling capability and low on-resistance, the STFU24N60M2 can be used in a variety of applications and provide superior performance.

The specific data is subject to PDF, and the above content is for reference

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