| Allicdata Part #: | 497-16968-ND |
| Manufacturer Part#: |
STFU6N65 |
| Price: | $ 1.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | N-CHANNEL 650 V, 1.2 OHM TYP., 4 |
| More Detail: | N-Channel 650V 4A (Tc) 620mW (Ta), 77W (Tc) Throug... |
| DataSheet: | STFU6N65 Datasheet/PDF |
| Quantity: | 995 |
| 1 +: | $ 1.13400 |
| 10 +: | $ 1.02438 |
| 100 +: | $ 0.82322 |
| 500 +: | $ 0.64028 |
| 1000 +: | $ 0.53052 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TA) |
| Power Dissipation (Max): | 620mW (Ta), 77W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 463pF @ 25V |
| Vgs (Max): | ±30V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.7 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STFU6N65 transistor is a part of a family of single FETs (Field-Effect Transistors) also refered to as MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). This type of transistor operates in a fundamentally different manner than BJT (Bipolar Junction Transistors), the most commonly used type of power Switch in the world.
BJT transistors feature two distinct components to operate as switches. The base and collector junction consist of two terminals sandwiching a semiconductor material and are used to start and control the flow of current in the device. By contrast, FETs operate with only one terminal, known as the gate. The gate electrode is insulated from the device with a thin layer of dielectric material, usually silicon dioxide (SiO2) material. The FET gate is used to start and control an electric field that modulates the current flow through the device.
FETs can be used for many of the same tasks as BJTs, and are often chosen for their increased input impedance, making them easier to drive than BJTs for applications such as RF (Radio Frequency). They also consume much less power, making them more efficient than BJTs in many situations. Although there are certain advantages of BJTs, such as their ability to handle higher power loads, the improved performance of FETs often makes up for any additional complexity.
The STFU6N65 is a fairly typical FET, with an ON resistance of 6.5 ohms and a peak drain current of 4A. With the gate voltage set at its default state (GND), the device\'s falls into a linear region, where it will begin to conduct current. When the gate voltage is increased further, the device will eventually reach its saturation point, allowing it to conduct a much higher current.
The STFU6N65 is well-suited to a variety of applications, including power switching, motor control, and DC-to-DC converters. In power switching applications, the device can be used to provide a fast and efficient switching solution, with minimal power consumption. In motor control applications, the device can be used to rapidly control the direction and speed of a motor via the gate voltage. Additionally, in DC-to-DC converter applications the device can be used to convert the input voltage to a much higher one, while still consuming minimal power.
In conclusion, the STFU6N65 is an example of a single FET device that can be used for a wide range of applications. The simple design and high input impedance make it an ideal choice for applications that require a low-power, fast-switching solution. With its high peak drain current and low on-resistance, the STFU6N65 is an excellent choice for applications that require a compact and efficient power switch.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| STFU23N80K5 | STMicroelect... | 1.67 $ | 1000 | MOSFETN-Channel 800V 16A ... |
| STFU11N65M2 | STMicroelect... | 0.64 $ | 1000 | MOSFET |
| STFU10N80K5 | STMicroelect... | 1.06 $ | 1000 | MOSFETN-Channel 800V 9A (... |
| STFU9N65M2 | STMicroelect... | 0.57 $ | 1000 | MOSFETN-Channel 650V 5A (... |
| STFU13N65M2 | STMicroelect... | 2.22 $ | 1000 | MOSFET N-CH 650V 10A TO-2... |
| STFU13N60M2 | STMicroelect... | 0.78 $ | 1000 | MOSFET N-CH 600V TO-220FP |
| STFU15N80K5 | STMicroelect... | 3.12 $ | 26 | MOSFET N-CH 800V 14A TO-2... |
| STFU16N65M2 | STMicroelect... | 0.92 $ | 1000 | MOSFETN-Channel 650V 11A ... |
| STFU13N80K5 | STMicroelect... | 3.35 $ | 2100 | MOSFET N-CH 800V 12A TO22... |
| STFU6N65 | STMicroelect... | 1.25 $ | 995 | N-CHANNEL 650 V, 1.2 OHM ... |
| STFU18N60M2 | STMicroelect... | 0.92 $ | 1000 | MOSFET N-CH 600V TO-220FP |
| STFU18N65M2 | STMicroelect... | 2.03 $ | 946 | MOSFET N-CH 650V 12AN-Cha... |
| STFU24N60M2 | STMicroelect... | 1.06 $ | 1000 | MOSFET N-CH 600V 18A TO-2... |
| STFU28N65M2 | STMicroelect... | 3.24 $ | 256 | MOSFET N-CH 650V 20AN-Cha... |
| STFU10NK60Z | STMicroelect... | 0.42 $ | 1000 | MOSFETN-Channel 600V 10A ... |
| STFU15NM65N | STMicroelect... | 3.02 $ | 488 | MOSFET N-CH 650V 12A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
STFU6N65 Datasheet/PDF