STFU6N65 Allicdata Electronics
Allicdata Part #:

497-16968-ND

Manufacturer Part#:

STFU6N65

Price: $ 1.25
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: N-CHANNEL 650 V, 1.2 OHM TYP., 4
More Detail: N-Channel 650V 4A (Tc) 620mW (Ta), 77W (Tc) Throug...
DataSheet: STFU6N65 datasheetSTFU6N65 Datasheet/PDF
Quantity: 995
1 +: $ 1.13400
10 +: $ 1.02438
100 +: $ 0.82322
500 +: $ 0.64028
1000 +: $ 0.53052
Stock 995Can Ship Immediately
$ 1.25
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TA)
Power Dissipation (Max): 620mW (Ta), 77W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 25V
Vgs (Max): ±30V
Series: --
Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STFU6N65 transistor is a part of a family of single FETs (Field-Effect Transistors) also refered to as MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). This type of transistor operates in a fundamentally different manner than BJT (Bipolar Junction Transistors), the most commonly used type of power Switch in the world.

BJT transistors feature two distinct components to operate as switches. The base and collector junction consist of two terminals sandwiching a semiconductor material and are used to start and control the flow of current in the device. By contrast, FETs operate with only one terminal, known as the gate. The gate electrode is insulated from the device with a thin layer of dielectric material, usually silicon dioxide (SiO2) material. The FET gate is used to start and control an electric field that modulates the current flow through the device.

FETs can be used for many of the same tasks as BJTs, and are often chosen for their increased input impedance, making them easier to drive than BJTs for applications such as RF (Radio Frequency). They also consume much less power, making them more efficient than BJTs in many situations. Although there are certain advantages of BJTs, such as their ability to handle higher power loads, the improved performance of FETs often makes up for any additional complexity.

The STFU6N65 is a fairly typical FET, with an ON resistance of 6.5 ohms and a peak drain current of 4A. With the gate voltage set at its default state (GND), the device\'s falls into a linear region, where it will begin to conduct current. When the gate voltage is increased further, the device will eventually reach its saturation point, allowing it to conduct a much higher current.

The STFU6N65 is well-suited to a variety of applications, including power switching, motor control, and DC-to-DC converters. In power switching applications, the device can be used to provide a fast and efficient switching solution, with minimal power consumption. In motor control applications, the device can be used to rapidly control the direction and speed of a motor via the gate voltage. Additionally, in DC-to-DC converter applications the device can be used to convert the input voltage to a much higher one, while still consuming minimal power.

In conclusion, the STFU6N65 is an example of a single FET device that can be used for a wide range of applications. The simple design and high input impedance make it an ideal choice for applications that require a low-power, fast-switching solution. With its high peak drain current and low on-resistance, the STFU6N65 is an excellent choice for applications that require a compact and efficient power switch.

The specific data is subject to PDF, and the above content is for reference

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