
Allicdata Part #: | 497-16306-5-ND |
Manufacturer Part#: |
STFU18N65M2 |
Price: | $ 2.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 12A |
More Detail: | N-Channel 650V 12A (Tc) 25W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 946 |
1 +: | $ 1.84590 |
50 +: | $ 1.48882 |
100 +: | $ 1.33995 |
500 +: | $ 1.04219 |
1000 +: | $ 0.86353 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | MDmesh™ M2 |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STFU18N65M2 is a discrete semiconductor device title to be specific MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It offers low on-state resistance which makes it suitable for high current applications allowing for higher efficiency and power density than a BJT (Bipolar Junction Transistor). STFU18N65M2 is a part of the ST FET (Surface Mount Field-Effect Transistor) series, specially designed for medium and high power switching applications.
Application Field
The STFU18N65M2 MOSFET has a wide variety of applications. It is a popular choice for bulk voltage regulation, battery chargers, solar inverters, industrial equipment and commercial loads, as well as high-performance automotive and light aircraft electronics. Additionally, it is one of the most recommended parts when it comes to home and office appliances. This is due to its high switching speed and low on-state resistance that allows it to efficiently handle high current capacity.
Working Principle
The working principle of the STFU18N65M2 is quite simple. Its construction consists of a single gate and source that are both connected to one drain. When a voltage is applied to the gate, a depletion region is created. This allows the flow of electrons from the applied voltage to the source (depending on the polarity and magnitude of the applied voltage). If a negative voltage is applied to the gate, then electrons from the source flow to the drain and the MOSFET is said to be "on". Otherwise, if a positive voltage is applied to the gate then the MOSFET is said to be "off".
The low on-state resistance of the STFU18N65M2 allows it to handle high current capacity. When combined with its high switching speed, this MOSFET becomes perfect for applications like power supplies. This is due to the fact that it can switch on and off with minimal losses, making it more efficient and reliable.
Due to its popularity, the STFU18N65M2 is available in different ratings and packages. This makes it suitable for a wide variety of applications and projects. However, it is important to always check the current ratings and specifications of the particular part before using it in any circuit.
Conclusion
The STFU18N65M2 MOSFET is a popular and highly efficient switch, ideally suited for medium and high power applications. Its wide variety of ratings and packages make it suitable for a wide range of projects and applications. Its low on-state resistance and high switching speed make it particularly suitable for power supplies and other applications that require high current capacity and fast switching times. Additionally, its construction is quite simple and robust, giving it a long service life.
The specific data is subject to PDF, and the above content is for reference
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