STGB18N40LZT4 Discrete Semiconductor Products

Series:	Automotive, AEC-Q101, PowerMESH™
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	420V
Current - Collector (Ic) (Max):	30A
Current - Collector Pulsed (Icm):	40A
Vce(on) (Max) @ Vge, Ic:	1.7V @ 4.5V, 10A
Power - Max:	150W
Switching Energy:	--
Input Type:	Logic
Gate Charge:	29nC
Td (on/off) @ 25°C:	650ns/13.5µs
Test Condition:	300V, 10A, 5V
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Base Part Number:	STG*18N

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Introduction
The STGB18N40LZT4 is a high-speed, low-on-resistance IGBT (Insulated Gate Bipolar Transistor) device with a single chip configuration. The device is rated at an average on-state current of 18A and a maximum on-state voltage of 400V. It is designed for use in low-power inverter, power factor correction (PFC) and motor control applications. This article will provide an overview of the application fields and working principle of the STGB18N40LZT4 device.

Application Fields
The STGB18N40LZT4 device provides a wide range of low-power applications, including low-power inverters, PFC, and motor control. The device can be used for a variety of low-power applications, such as driving single phase BLDC and AC motors, driving MOSFET and IGBT gate drivers, and providing power factor correction. The device is also suitable for use in automotive, communications, industrial, and consumer applications.

Operation
The STGB18N40LZT4 device operates by using a single P-channel and N-channel MOSFET. The P-channel MOSFET is connected to the gate and is used to control the voltage across the device. The N-channel MOSFET is connected to the drain and is used to control the current flowing through the device. When a voltage is applied to the gate, the P-channel MOSFET is turned on, allowing a current to flow from the source to the drain. The N-channel MOSFET is turned off when the voltage across the P-channel MOSFET drops below a certain threshold, allowing the device to turn off. The voltage across the P-channel MOSFET can be modified by adjusting the gate voltage. The STGB18N40LZT4 device can also be operated in a bi-directional mode, allowing it to be used for both buck and boost applications.

Features and Benefits
The STGB18N40LZT4 device provides a number of features and benefits. It is protected against overcurrent and overvoltage, providing a safer device. The device is also protected against Electrostatic Discharge (ESD), making it suitable for a wide range of applications. The device has a high switching frequency and low on-resistance, allowing it to be used in high-speed applications. The device also provides an on-state current of 18A, making it suitable for a variety of low-power applications. The device can also be operated in either buck or boost mode, making it suitable for low-power switching applications.

Conclusion
The STGB18N40LZT4 is a high-speed, low-on-resistance, single IGBT device designed for use in low-power inverter, power factor correction, and motor control applications. The device operates by using a single P-channel and N-channel MOSFET, and is protected against both overcurrent and overvoltage. The device also provides a high switching frequency and low on-resistance, allowing it to be used in a wide range of low-power applications. The device can also be operated in either buck or boost mode, making it suitable for low-power switching applications.

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