STL8DN10LF3

Vgs(th) (Max) @ Id:	3V @ 250µA
Base Part Number:	ST*8DN
Supplier Device Package:	PowerFlat™ (5x6)
Package / Case:	8-PowerVDFN
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power - Max:	70W
Input Capacitance (Ciss) (Max) @ Vds:	970pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	20.5nC @ 10V
Series:	Automotive, AEC-Q101, STripFET™ III
Rds On (Max) @ Id, Vgs:	35 mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C:	20A
Drain to Source Voltage (Vdss):	100V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The world of transistors and arrays is an ever-changing landscape, and the introduction of the STL8DN10LF3 is a testament to that. This transistor-FET based array is one of the most commonly used, with a strong focus on both application fields and working principles. Here, we\'ll be taking a closer look at both aspects and how they come together to form one of the most reliable arrays around.

First, let\'s start with the STL8DN10LF3\'s application field. As the name implies, it is best suited for general purpose applications, from research labs to industrial factories. Its FET-based design makes it especially useful for any project seeking a mix of high speed and low power consumption. Therefore, the array can be utilized in any number of tasks from powering communications systems and robotics to ensuring data security and intelligent sensing.

When it comes to the STL8DN10LF3\'s working principles, a few core concepts come into play. First is the use of FETs. FET stands for field effect transistor and is one of the most widely used transistor types. It utilizes a gate voltage to control the current flow, allowing greater versatility and accuracy than the traditional bipolar transistor. The FET design also helps boost the array\'s speed and reduce power consumption, while its relatively small size makes it very attractive in applications that require several transistors in a small area.

The second aspect of the STL8DN10LF3, and perhaps the most important, is its robust array structure. This particular array consists of eight separate FETs that are connected in parallel, allowing for greater speed and power efficiency. Additionally, each FET can be individually controlled, allowing for more precise control of the current once the array is switched on. This makes the STL8DN10LF3 an ideal choice for situations demanding accuracy and speed.

In conclusion, the STL8DN10LF3 is a transistor-FET based array with a focus on both application field and working principles. Its FET-based design makes it well suited for high-speed, low-power applications, while its parallel FET structure enables the current to be precisely controlled. All in all, the STL8DN10LF3 is quickly becoming one of the most reliable arrays around.

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