STL8P4LLF6

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerFlat™ (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	2.9W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2850pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 4.5V
Series:	STripFET™ F6
Rds On (Max) @ Id, Vgs:	20.5 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The Stylus 8P4LLF6 is a high performance MOSFET transistor of the single type. It is used in a variety of applications, ranging from power supplies to high frequency AC-DC conversion, microprocessor power supplies, and motor drive circuits. The single type of MOSFET transistor is a bipolar device with a single gate, source, and drain terminal. The Stylus 8P4LLF6 is rated at 50 volts and offers high-current driving capability of up to 35 Amps. It is designed for gate turn-on applications with a maximum gate threshold voltage of 5.5 volt. It is designed to be used in low-side and high-side switch applications, both for power and for signal switching. Its high-speed turn-on and turn-off times, combined with its exceptional efficiency make it an ideal choice for high volume and heavy-duty applications. The Stylus 8P4LLF6 has an extremely low on-state resistance, meaning that it has less power dissipation than other types of transistors. This low on-state resistance translates into better efficiency and greater power savings. It also has exceptionally low voltage threshold gate-drain leakage, meaning that it can be used in high-current loads without worrying about gate-drain leakage, which can cause significant power losses and damage. The Stylus 8P4LLF6 also offers low electromagnetic interference (EMI), making it suitable for applications where EMI needs to be minimized. This makes it an ideal choice for use in circuits that require EMI mitigation. Its low on-state resistance also makes it suitable for power switching applications. The Stylus 8P4LLF6 has an excellent current handling capability and a high linearity rating for driving demanding loads. Its low on-resistance makes it ideal for use in high-current and high-frequency applications. It also has a high breakdown voltage rating, meaning that it can be used in high voltage applications such as automotive applications. The Stylus 8P4LLF6 is a robust and reliable MOSFET transistor. It is highly resistant to corrosion and damage, making it suitable for use in a wide range of applications. It is also compatible with a variety of electrical supply, enabling it to be used in a range of conditions. Its high-frequency switching, low power dissipation, and improved efficiency make it an excellent choice for many different applications. In conclusion, the Stylus 8P4LLF6 is a reliable and robust MOSFET transistor of the single type that offers high-current driving capability, low on-state resistance, and low EMI. It is suitable for use in a variety of applications including power supplies, AC-DC conversion, microprocessor power supplies and motor drive circuits. Its low resistance, high current capabilities and high linearity rating make it an ideal choice for high-current, high-frequency and demanding loads.

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