STL8N80K5

Vgs(th) (Max) @ Id:	5V @ 100µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerFlat™ (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	16.5nC @ 10V
Series:	SuperMESH5™
Rds On (Max) @ Id, Vgs:	950 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>STL8N80K5 is a silicon steel MOSFET manufactured by STMicroelectronics. It is a single N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET). As explained below in this article, the STL8N80K5 can be used in many applications and has a fundamental working principle.</p><p><strong>Application Field</strong></p><p>The STL8N80K5 can be used in several applications as a power switch and current limiting device. It is an especially efficient device in pulsed applications due to its fast switching feature and low input capacitance. It can be used as an interface between a control circuit and a load that requires a high current flow, such as a motor or light bulb. Additionally, it can be employed as a high side switch to protect and drive loads such a voltage regulator and a relay driver. Common applications for the STL8N80K5 range from automotive and motorsport circuit protection and control to lighting, heating, and ventilation systems.</p><p><strong>Working Principle</strong></p><p>The STL8N80K5 is built on ST’s advanced seventh generation N-channel MOSFET technology. The device operates by using the principle of leakage current, which is the current that passes through an insulator when a voltage is applied. In an N-channel device, the increased voltage causes a greater number of electrons to enter the insulator, increasing the leakage current. In the on-state, MOSFETs in general and the STL8N80K5 in particular, control the current by using the gate-source voltage. When VGS (the gate-source voltage) is increased (above the threshold voltage) it creates a channel between the source and the drain and increases the current flow, while a low gate voltage (below the threshold) blocks it.</p><p>On top of the current control, the device is equipped with an internal ESD-Anti-Parallel diode network, allowing for high frequency, high current operation and low power losses.</p><p>Therefore, the basic working principle of the STL8N80K5 is that applying a gate voltage above the threshold voltage creates a conducting channel between source and drain, allowing current to flow, while a low gate voltage blocks the current. This follows the operating principle of all MOSFETs. </p>

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