STL8N65M5

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The STL8N65M5 is a state-of-the-art N-Channel metal oxide semiconductor field effect transistor (MOSFET). It is a part of the STMicroelectronics MOSFET portfolio and it is designed to operate with a drain-source voltage of up to 500 V and a drain current of up to 18 A. This reliable STM8N65M5 device is manufactured using a low-voltage process and it is typically intended for use in commercial and industrial applications. These applications include motor controls, automated door locks, and many other power management systems.

The STL8N65M5 consists of one P-type epitaxial channel in the form of a MOSFET. It has been designed to contain an integrated high-voltage substrate and it is insulated using Field Plate Technology (FPT). This gives it extra reliability which makes it well suited for many high-powered applications where reliability is essential. It has a maximum V _CS drain-to-source breakdown voltage of 500 V and a dynamic drain resistance of 55 mΩ at a drain current of 0.3V _GS.

The working principle of the STL8N65M5 is based on the fact that when a positive-voltage is applied to the gate of an N-channel MOSFET, a conductive region is created in the channel. This causes a current to flow through the device between the source and the drain, which is proportional to the value of the applied voltage. As the applied voltage increases, the current also increases. The advantage of a MOSFET over a bipolar transistor is that it can provide a higher current for a given voltage, so it is ideal for applications requiring high speed switching with low gate drive power consumption.

The STL8N65M5 has been designed to offer high efficiency, low on-resistance, low gate charge, and low threshold voltage. This makes it well suited for both high-frequency and high-current power management applications where efficiency and reliability are important. It is also suitable for use in high-speed switching applications as it can provide fast switching speeds with low power consumption. Furthermore, its low drive voltage and current requirements ensure that it can be integrated easily into small designs.

In conclusion, the STL8N65M5 is a state-of-the-art N-Channel MOSFET designed to provide high efficiency, low on-resistance and low gate charge. It is suitable for use in commercial and industrial applications such as motor controls, automated door locks, and many other power management systems. Furthermore, its low drive voltage and current requirements make it well suited for use in high-speed switching applications as it can provide fast switching speeds with low power consumption.

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