Allicdata Part #: | 497-13652-2-ND |
Manufacturer Part#: |
STL8N10LF3 |
Price: | $ 0.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 100V 20A PWRFLT5X6 |
More Detail: | N-Channel 100V 20A (Tc) 4.3W (Ta), 70W (Tc) Surfac... |
DataSheet: | STL8N10LF3 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.82158 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 4.3W (Ta), 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 970pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20.5nC @ 10V |
Series: | Automotive, AEC-Q101, STripFET™ III |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STL8N10LF3 is a single-gate MOSFET that is used in a variety of applications, such as motor control, switching, and signal conditioning in industrial or consumer electronics. This surface-mount device is a three-terminal, symmetrical MOSFET that provides low on-state resistance and a fast switching time. In addition, its low gate drive voltage, small size and high impedance make it ideal for many applications. In this article, we will discuss the application field and working principle of the STL8N10LF3.
Application Field
The STL8N10LF3 is used in a variety of applications due to its low on-state resistance and fast switching time. Its ability to handle high-current loads and its low level of power consumption make it an ideal choice for motor control, such as brushless DC motors, stepper motors and AC motors. It can also be used in signal conditioning applications, such as signal line-conditioning and variable frequency drives. In addition, its low gate drive voltage makes it suitable for many RF applications, including RF signal amplifiers, RF signal switches, and RF signal isolators.
Due to its small size and high input impedance, the STL8N10LF3 is also an excellent choice for use in automotive electronics. For example, it can be used to control a variety of actuators, including fuel pumps, window motors, antilock brake systems and seatbelt pre-tensioners. Other applications for this device include switching for industrial process control, laser drivers and audio amplifiers.
Working Principle
The STL8N10LF3 is a three-terminal, symmetrical MOSFET that operates based on the principle of the field-effect transistor. It has a high input impedance and a low output voltage saturation voltage. The device has a drain terminal, a gate terminal and a source terminal. When a voltage is applied to the gate terminal, the device turns “on”, allowing current to flow from the source to the drain. The voltage at the gate terminal determines the amount of current that can flow through the MOSFET.
The STL8N10LF3 has a low on-state resistance, which enables it to quickly switch from “off” to “on”, and from “on” to “off”. This makes it ideal for use in applications that require rapid response times, such as motor control and signal conditioning. In addition, because of its low gate drive voltage, it is also suitable for use in RF applications.
The STL8N10LF3 also has a low level of power consumption and is capable of handling high currents, making it ideal for motor control and other power-sensitive applications. Furthermore, its small size makes it ideal for use in tight spaces.
Conclusion
The STL8N10LF3 is a single-gate MOSFET that is used in a variety of applications, such as motor control, switching and signal conditioning. Its low on-state resistance, fast switching time, low level of power consumption and its small size make it an ideal choice for many applications. In addition, its low gate drive voltage and high input impedance make it suitable for use in automotive electronics, RF applications and other applications where rapid response times and low levels of power consumption are required.
The specific data is subject to PDF, and the above content is for reference
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