STL8N6LF6AG

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The STL8N6LF6AG is a single N-channel enhancement mode DMOS FET developed with the latest TrenchMOSFET® technology. It was designed with an enhanced level of on-resistance, breakdown voltage, and thermal performance for use in a wide range of applications. This versatile device is suitable for a range of voltage and temperature settings, but is most commonly used in medium and low voltage systems.

Although the STL8N6LF6AG is characterized by a high breakdown voltage, it remains an efficient device for breaking and controlling current, and maintaining a consistent on/off state. Its DMOS FET structure allows it to be used in multiple applications, as it contains two N-channel MOSFETs with distinct gate terminals and separate body contacts, allowing for independent control of current flow. This makes it ideal for systems with multiple supplies and multiple devices, as it is able to break circuits without causing other parts of the circuit to fail.

The STL8N6LF6AG is designed to operate at both low and medium voltage, making it ideal for applications such as power switching andload switching. The device can be used to switch off and on power lines in order to protect electronic devices such as computer systems and medical devices. It can also be used as a load switch to improve the efficiency of a system by controlling the current flow within it. The device has a wide voltage range, allowing it to be used in circuits from 12V to 120V.

In terms of applications, the STL8N6LF6AG is typically used for low power, high current, and portable applications. It is an ideal choice for consumer and industrial electronics, where its enhanced on-resistance and breakdown voltage performance make it well-suited to prevent load switching, voltage regulation, and current regulation. In addition, its small size and low power consumption make it very cost effective and efficient.

The STL8N6LF6AG is a unique device, as it is the only device on the market that incorporates both high breakdown voltage and high on-resistance, allowing it to be used in a range of applications. When used in an appropriate application, the device can provide a high switching speed and a low voltage drop. Its enhanced level of on-resistance also makes it an ideal choice for power regulation applications as it is able to reduce losses and increase efficiency.

In terms of operation, the STL8N6LF6AG is a single N-channel enhancement mode DMOS FET with a gate-source voltage of 4.5 V and a drain-source voltage of 8V. The device has a breakdown voltage of 18V and a maximum drain current of 11A. It is able to handle a repetitive peak drain current of 16A and has a drain-source capacitance of 4.2 pF. The device is designed to operate in a temperature range of -40 to 85°C, making it suitable for a number of different environments.

In summary, the STL8N6LF6AG is a single N-channel enhancement mode DMOS FET with a high breakdown voltage and low on-resistance. It is suitable for applications ranging from power switching and load switching to voltage regulation and current regulation. The device is able to handle high peak drain currents and temperatures, making it a reliable choice for consumer and industrial electronics. The small size and low power consumption of the device make it an economical choice for a range of applications.

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