STL80N3LLH6

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerFlat™ (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	60W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1690pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 4.5V
Series:	DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs:	5.2 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STL80N3LLH6 Application Field and Working Principle

Transistors are essential components that are widely used in today’s electronic devices. They are important to the functioning of a variety of circuits, providing amplification, data processing, sensing, switching, and other functions. Among the different types of transistors, field-effect transistors (FETs) are particularly important, as they are often used as amplifiers, switches, voltage regulators, and other applications. The STL80N3LLH6 is a single, low-voltage enhancement-mode FET designed for use in general purpose switching and amplifier circuits. In this article, we will discuss the application field and working principle of the STL80N3LLH6.

Overview of STL80N3LLH6

The STL80N3LLH6 is a single-gate FET with a low-voltage rating of 3.0V. It is specifically designed for use in DC-to-DC converter circuits and load switch applications. The device is capable of 250mA current with a maximum drain-to-source voltage (VDS) of 30V and a maximum gate-to-source voltage (VGS) of ±20V. Additionally, the device has a low on-state drain-to-source resistance (RDS(ON)) of 204 mOhm (typical) at an VGS of 4.5V.

Application Fields of STL80N3LLH6

Due to its low on-resistance (RDS(ON)), the STL80N3LLH6 is particularly well suited for use in DC-DC converter applications. Its low voltage rating makes it ideal for use in battery-powered devices, as it can efficiently reduce the required input voltage to the device from a higher voltage level. Additionally, its high current rating of 250mA makes it suitable for use in power switch applications. The device is also ideal for use as an amplifier, as it can be easily configured to boost low-level signals. Furthermore, the device can also be used for load switching and for providing protection against over-current and short circuits.

Working Principle of the STL80N3LLH6

The primary components of the STL80N3LLH6 are its gate, drain, and source. The gate is the control element of the device, and it is responsible for controlling the flow of current through the device. The gate is connected to a source of electrical power, usually in the form of a resistor, which applies a voltage to the gate. This voltage is known as the gate-to-source voltage (VGS). When the gate voltage (VGS) reaches a certain threshold value, the device will turn on and begin to allow current to flow from the drain to the source.On the other hand, when the gate voltage (VGS) falls below the threshold value, the device will turn off and the current flow from the drain to the source will be blocked. The voltage at which the device turns on is known as the threshold voltage (VTH), and it is typically provided in the device’s datasheet. The drain-to-source resistance (RDS(ON)) of the device also varies with VGS, such that it is lowest when VGS reaches its maximum.

Conclusion

The STL80N3LLH6 is a single-gate FET designed for low voltage applications. Its low voltage rating makes it ideal for use in battery-powered devices, while its high current rating makes it suitable for power switch applications. Additionally, the device can also be used as an amplifier, load switch, and for protection against over-current and short circuits. Furthermore, the device is capable of a low on-resistance (RDS(ON)) voltage of 3.0V, which is reduced as the gate-to-source voltage (VGS) increases.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description