STL8N6F7

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerFlat™ (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3W (Ta), 60W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8nC @ 10V
Series:	STripFET™ F7
Rds On (Max) @ Id, Vgs:	25 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STL8N6F7 Application Field and Working Principle
The STL8N6F7 is an N-channel Enhancement Mode field effect transistor (FET) designed to provide superior performance in high performance, low-frequency and low-voltage applications. The device is particularly suitable for use in low-voltage applications as it features a breakdown voltage range of 3.0V to 8.0V. It also features a typical rds on value of 5ohms and is capable of delivering peak output currents up to 18A. The device has a mechanically rugged design and is rated for operation at temperatures up to 125°C.
The STL8N6F7 is part of a new family of single-channel FETs that provides improved performance in a wide range of applications. The device is designed to provide superior switching performance, with improved linearity, power dissipation and fast switching times. The device also provides superior electro-static discharge (ESD) protection, making it suitable for use in high performance, low voltage applications. The device is also designed to be environmentally friendly, as it features a low carbon footprint and minimal environmental impact.
The working principle of the STL8N6F7 FET is based on a simple field effect mechanism. When a voltage is applied to the gate electrode of the device, it creates an electric field that repels electrons from the surface of the semiconductor material and creates a channel of charge carriers in the device. The channel is then used to control the flow of current through the device, with the voltage applied to the gate electrode controlling the resistance of the channel and thus the flow of current. The device is capable of achieving high efficiency, with fast switching times and low power dissipation. It is suitable for applications such as motor control, digital signal processing, power supply design and power amplifier design.
The STL8N6F7 FET is an excellent choice for use in applications requiring low power, fast switching and high efficiency. It is suitable for use in a wide range of applications, including motor control, digital signal processing, power supply design and power amplifier design. The device is simple to use and is highly reliable and environmentally friendly. The device is also capable of delivering high efficiency, with fast switching times and low power dissipation.

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