STU60N55F3

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The STU60N55F3 is a high-voltage three-phase FET (Field Effect Transistor) device with an operating junction temperature range of -40°C to +150°C. The transistor offers low on-resistance and high-current handling in a very limited size package, making it suitable for various application fields such as lighting, inverter, and motor drive technology. This article will describe the application field and working principle of the STU60N55F3.

Application Field:

The STU60N55F3 can be used as a switch or an amplifier in many applications that require high voltage and high current. It can be used in various electrical systems such as motor drives, lighting and inverter systems. These applications require high current and reliable, uninterrupted operation, as well as efficient switching. The STU60N55F3 is well equipped to meet these requirements due to its low on-resistance and high current capabilities, as well as its temperature range. The STU60N55F3 can even be used in hazardous area applications.

Working Principle:

The STU60N55F3 is a three-phase FET device that utilizes the principle of field effect. This is done by applying an electric field in order to create a conducting channel between the source and the drain of the FET. The gate voltage controls the width of this channel, which in turn controls the flow of current between the source and the drain. By controlling the gate voltage, the current can be switched on and off or the output can be modulated to create an amplifying effect.

The STU60N55F3 is built using a single vertical structure that consists of three junction field-effect transistors (JFETs). This allows the three phases to be connected in series or parallel, thus allowing flexibility in the applications in which it may be used. The two-terminal drain and source pins are connected to a high voltage gate drive. The gate towers are externally connected. The maximum gate-source voltage rating is 60 V, with a continuous drain-source current of 10 A.

Conclusion:

The STU60N55F3 is a high-voltage three-phase FET device. It is capable of handling high voltages and continuous current of 10 A, making it suitable for switching and amplification applications. Its low on-resistance and high current handling capabilities make it suitable for demanding applications such as lighting, inverter, and motor drive technology. Because of its single-vertical structure and its low gate-source voltage rating, it can be used in hazardous area applications. By understanding the application field and working principle of the STU60N55F3, engineers can ensure that it is the right device to fulfill their application requirements.

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