STU6N90K5

Rds On (Max) @ Id, Vgs:	1.1 Ohm @ 3A, 10V
Package / Case:	TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Vgs (Max):	±30V
Vgs(th) (Max) @ Id:	5V @ 100µA
Series:	MDmesh™ K5
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	900V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STU6N90K5 is a kind of n-channel Enhancement mode Field-Effect Transistor (FET), which is developed and produced by EON with the unique proprietary of STMicroelectronics. As the ultimate n-channel MOSFET, STU6N90K5 is featuring low Rds(on) and the best efficiency of balance performance.Application FieldSTU6N90K5 is mainly used in automotive systems, telecom equipments, home appliances, consumer products, IT and Industrial markets, etc.For automotive system, STU6N90K5 can be used in battery charging systems, secondary air injection control systems, diesel direct injection systems etc.In Telecommunication equipments, STU6N90K5 can be used as switching device, combining with components such as high frequency amplifier, low pass filter, power divider and power filter, etc.In home appliances, STU6N90K5 can be used as motor control switch, as well as appliance control switch, such as washing machine, food processors, rice cookers and so on.In consumer products, STU6N90K5 can be used for battery power source, chargers, HDD motors, etc.In IT and Industrial markets, STU6N90K5 can be used for computer main board power switch, server chips, display card, switches and other devices, moreover, it is also used in audio system, digital LCD, large sound box and other high power devices.Working principleThe working principle of STU6N90K5 is based on its FET structure which contains a source and a drain. An electronic biasing is applied to the gate terminal sets up a semiconductor channel in the MOSFET and sets up the FET in either enhancement mode or triode mode.In enhancement mode, a negative voltage is applied to the gate terminal, the pin of the substrate is at zero voltage. A voltage is applied between the source and drain terminals, causing a potential difference between them. This potential difference will influence the behavior of electrons and create an approximation of the n-type conductivity material flow across the channel at the junction of the drain and source.In triode mode, the current flow between the source and the drain increases with the addition of a positive voltage to the gate terminal. In this mode of operation, the FET is driven by a positive voltage, the reverse bias between the gate-source terminals can decrease and let the channel be opened for more current flow.ConclusionIn conclusion, STU6N90K5 is a kind of n-channel FET, and its application field covers a wide range of devices, such as automotive systems, telecom equipments, home appliances, consumer products, IT and Industrial markets. Here its working principle is briefly introduced. It works by creating a semiconductor channel in the MOSFET and putting it in either enhancement mode or triode mode, by which the current flow between the source and the drain increases with the addition of a positive voltage to the gate terminal. By taking the advantage of its excellent performance, STU6N90K5 is widely used in our daily life.

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