| Allicdata Part #: | 497-13978-5-ND |
| Manufacturer Part#: |
STU6N60M2 |
| Price: | $ 1.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V IPAK |
| More Detail: | N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole I-P... |
| DataSheet: | STU6N60M2 Datasheet/PDF |
| Quantity: | 4149 |
| 1 +: | $ 1.06000 |
| 10 +: | $ 1.02820 |
| 100 +: | $ 1.00700 |
| 1000 +: | $ 0.98580 |
| 10000 +: | $ 0.95400 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 232pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.5nC @ 10V |
| Series: | MDmesh™ II Plus |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STU6N60M2 is a high voltage MOSFET module, rated at 600V and 6A. It is designed to be used in a wide range of industrial, commercial and residential applications, such as motor drive, lighting control, and power electronics. The device has two levels of reverse voltage protection and wire-bonding technology to ensure robust operation in adverse environments. In this article, we will discuss the application field and working principle of the STU6N60M2.
Application Field of the STU6N60M2
The STU6N60M2 device is ideal for use in industrial and residential applications that require high voltage switching. For example, it can be used in motor drive applications, such as AC inverter controls, HVAC systems, and robot manipulators. It can also be used to control the speed of high-voltage motors or the power of their load. Additionally, the STU6N60M2 can be used to control lights in residential and commercial settings, as well as providing protection against line overvoltage conditions.
Working Principle of STU6N60M2
The STU6N60M2 MOSFET is based on an n-channel metal oxide semiconductor field effect transistor (MOSFET). This type of transistor operates by using a fully insulated gate electrode to control the current flow between the source and the drain. The gate is insulated from the body of the device by a thin layer of silicon dioxide. When a voltage is applied to the gate electrode, the transistor switches from its "off" state to its "on" state, allowing current to flow between the source and the drain.
The STU6N60M2 has two levels of reverse voltage protection. The first is an integrated reverse blocking thyristor, or anti-parallel SCR, which switches the MOSFET off to prevent reverse current flow. The second level of protection is an integrated zone-current limitation feature, which limits the current flow in both the forward and reverse directions. This is especially useful if the device is subject to surprisingly high voltage spikes.
The STU6N60M2 also features wire-bonding technology. Through this technology, the MOSFET is connected to the power source using wires instead of solder. This ensures that the connection is robust and reliable in any operating environment. The device also features various other features such as built-in ESD protection and temperature compensation.
In conclusion, the STU6N60M2 is a high-voltage MOSFET module rated at 600V and 6A. It is designed for high-voltage switching applications, and features two levels of reverse voltage protection and wire-bonding technology for reliable operation in any environment. It is suitable for industrial, commercial and residential applications.
The specific data is subject to PDF, and the above content is for reference
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STU6N60M2 Datasheet/PDF