STU6NF10

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 175°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	280pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	STripFET™
Rds On (Max) @ Id, Vgs:	250 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STU6NF10 is a type of enhancement mode MOSFETs (metal–oxide–semiconductor field-effect transistor) that is suitable for a variety of applications. MOSFETs are some of the most commonly used transistors in the world and are notable for providing superior performance compared to other types of field-effect transistors (FETs). STU6NF10 is known for its low On resistance, fast switching speeds, and excellent temperature characteristics. This makes it an ideal choice for applications where high power efficiency, low noise and high speed is desired.MOSFETs, in general, work by varying a channel of semiconductor material using an electric field. STU6NF10 works in a similar fashion. The gate terminal is connected to an externally supplied voltage and is used to control the flow of current through the channel, allowing current to flow when the gate voltage is greater than the source voltage.The STU6NF10 is a single n-channel enhancement mode MOSFET and is available in various package types such as the TO-220AB and the SOT-223. It has an 80V breakdown voltage and a 5A continuous drain current rating at 25°C. It also has a maximum drain-source on-resistance (Rds(on)) of 8mΩ, which makes it an ideal choice for high efficiency applications like switching converters and power supplies.STU6NF10 is commonly used in a variety of applications because its low on-resistance offers good heat dissipation, its fast switching capability makes it suitable for high speed switching, and its low gate-to-drain capacitance resistance is ideal for noise-sensitive designs. Additionally, the device has an integrated Schottky diode to limit overvoltage transients, which makes it well suited for high voltage applications.Another desirable feature of STU6NF10 is its temperature stability. This is because the device is constructed using thin-film technology, which increases its thermal stability and resistance to fatigue. This makes it an excellent choice for applications that require long-term reliability.In conclusion, the STU6NF10 is an excellent choice for a variety of applications due to its fast switching speed, low on-resistance, and temperature stability. Its low gate-to-drain capacitance resistance, integrated Schottky diode, and temperature stability make it a viable option for many applications ranging from switching converters and power supplies to noise-sensitive designs.

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