STU6N65M2

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The STU6N65M2 is a high voltage vertical MOSFET for automotive applications that combine low on-resistance and high input impedance characteristics. It is part of a family of power MOSFETs from STMicroelectronics that are specifically designed for automotive applications.

The STU6N65M2 is constructed using an epitaxial layer of high purity silicon which is insulated from the drain and source terminal by a silicon dioxide (SiO2) layer. The gate is insulated from the channel using an oxide-nitride-oxide (ONO) layer.

The device is designed to operate in a linear mode, with a drain-source voltage (VDS) of up to 40V and drain-source current (ID) of up to 6A. It is also designed to operate in Very High Speed (VHS) mode, with a VDS of up to 28V and an ID of up to 50A.

The STU6N65M2 is a P-Channel MOSFET, meaning that the device is biased in the “on”state when the gate voltage is below the source voltage. This allows the STU6N65M2 to be used in high side switching applications, as the gate can be connected directly to the positive supply rail, simplifying the circuit design.

The STU6N65M2 features low on-resistance, which enables high efficiency switching, and high input impedance, allowing for higher “off” times for more efficient operation. The device also features integrated ESD protection, a high frequency switching capability, and is available in a variety of surface mount and through-hole packages.

The STU6N65M2 is ideal for automotive applications such as electronic power steering, electronic throttle control, body electronic control and general power running of controls that require low on-resistance and high input impedance. It is also suitable for applications such as DC/DC converters, SMPS, welding machinery and UPS systems.

The working principle of the STU6N65M2 is based on the ability of a semiconductor to control current flow. The device has three terminals, which are the source, gate, and drain. When the gate voltage is below the source voltage (“on” state), current is allowed to flow from the drain to the source. When the gate voltage is above the source voltage (“off” state), current is not allowed to flow from the drain to the source.

When a voltage is applied to the gate (Vg), it creates an electrical field that attracts electrons from the sources region to the drain region, which is the “on” state. This depletion of the source’s electrons promotes current to flow from the drain to the source.

When the voltage applied to the gate is reduced, or removed altogether, the depletion region disappears and electrons are no longer attracted to the drain, effectively blocking the current flow between the drain and source, which is the “off” state.

These switching characteristics, combined with the device’s low RDS(on) and high input impedance, make the STU6N65M2 a perfect choice for automotive applications requiring low on-resistance and high input impedance.

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