STW60N65M5

The STW60N65M5 is a single N-channel MOSFET designed and manufactured by ST Microelectronics. This field-effect transistor utilizes diamond 5 vertical trench technology, and it is specifically designed for high-efficiency applications in converters and DC/DC switches. It provides extremely low gate charge and low on resistance, making it ideal for high-speed switching.

The STW60N65M5 features a maximum drain current (ID) of 60A and a continuous drain current (ID) of 41A. The maximum pulse drain current (IDM) is 130A, while the maximum avalanche energy (EAR) is 950 mJ. The total gate charge (Qg) is 33 nC, and the maximum gate voltage (VGS) is ±20V.

This transistor has a RDS(on) of 0.089 Ω and a maximum operating temperature of 175°C, making it suitable for a wide range of commercial and industrial applications. Additionally, its breakdown voltage (BVDSS) is 600V, and its maximum drain to source voltage (VDSS) is 650V.

The STW60N65M5 operating in the ON state allows an electric current to flow from the Source to the Drain. The transfer of charge happens when a positive voltage at the control terminal (known as the Gate) attracts the tiny electrons in the semiconductor region, causing a channel to be formed. When voltage is applied, an electric current can flow through the channel between the Source and the Drain.

The STW60N65M5 can be used in a variety of applications, such as DC to DC converters, high-frequency converters, and motor drives. It is also suitable for load switch applications and for the switching of loads in automotive applications. Its high current handling capabilities make it perfect for a wide range of commercial, industrial, and automotive applications.

The STW60N65M5 is an ideal choice for applications that require high current handling, low on-resistance, and minimal switching losses. Its high drain current and related parameters make it suitable for a wide range of high-efficiency DC/DC converters and motor drives. Additionally, its low gate charge reduces the switching losses in fast switching applications.